IRF510L

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Mfr.Part #
IRF510L
Manufacturer
Vishay
Package / Case
TO-262-3 Long Leads, I2Pak, TO-262AA
Datasheet
Download
Description
MOSFET N-CH 100V 5.6A TO262-3
Stock
3,079
In Stock :
3,079

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Manufacturer :
Vishay
Product Category :
Transistors - FETs, MOSFETs - Single
Supplier Device Package :
TO-262-3
Height :
9.01mm
Package / Case :
TO-262-3 Long Leads, I2Pak, TO-262AA
Continuous Drain Current (ID) :
5.6A
Vgs(th) (Max) @ Id :
4V @ 250µA
Element Configuration :
Single
Turn-Off Delay Time :
15 ns
Gate Charge (Qg) (Max) @ Vgs :
8.3nC @ 10V
Max Power Dissipation :
3.7W
Rds On Max :
540 mΩ
Mount :
Through Hole
Input Capacitance (Ciss) (Max) @ Vds :
180pF @ 25V
Gate to Source Voltage (Vgs) :
20V
Turn On Delay Time :
6.9 ns
Length :
10.41mm
Drain to Source Breakdown Voltage :
100V
Width :
4.7mm
Rds On (Max) @ Id, Vgs :
540mOhm @ 3.4A, 10V
Rise Time :
16ns
FET Type :
N-Channel
Fall Time (Typ) :
9.4 ns
RoHS Status :
Non-RoHS Compliant
Operating Temperature :
-55°C~175°C TJ
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Drain to Source Voltage (Vdss) :
100V
Min Operating Temperature :
-55°C
Current - Continuous Drain (Id) @ 25°C :
5.6A Tc
Mounting Type :
Through Hole
Packaging :
Tube
Input Capacitance :
180pF
Number of Channels :
1
Max Operating Temperature :
175°C
Weight :
6.000006g
Drain to Source Resistance :
540mOhm
Datasheets
IRF510L
Introducing Transistors - FETs, MOSFETs - Single Vishay IRF510L from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-262-3 Long Leads, I2Pak, TO-262AA, Operating Temperature:-55°C~175°C TJ, Mounting Type:Through Hole, Number of Channels:1, IRF510L pinout, IRF510L datasheet PDF, IRF510L amp .Beyond Transistors - FETs, MOSFETs - Single Vishay IRF510L ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Vishay IRF510L


N-Channel Tube 540mOhm @ 3.4A, 10V 180pF @ 25V 8.3nC @ 10V 100V TO-262-3 Long Leads, I2Pak, TO-262AA

IRF510L Overview


A device's maximal input capacitance is 180pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 5.6A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 100V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 15 ns, which is the time to charge the device's input capacitance before drain current conduction begins.When a gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the resistance between the drain and the source of the device is 540mOhm.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 6.9 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.This transistor requires a 100V drain to source voltage (Vdss).

IRF510L Features


a continuous drain current (ID) of 5.6A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 15 ns
single MOSFETs transistor is 540mOhm
a 100V drain to source voltage (Vdss)


IRF510L Applications


There are a lot of Vishay Siliconix
IRF510L applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
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