IRF510SPBF

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance (Ciss) (Max) @ Vds :

180pF @ 25V

Supplier Device Package :

D2PAK

Fall Time (Typ) :

9.4 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Drain to Source Resistance :

540mOhm

Vgs(th) (Max) @ Id :

4V @ 250µA

Vgs (Max) :

±20V

Number of Pins :

3

RoHS Status :

ROHS3 Compliant

Input Capacitance :

180pF

Current - Continuous Drain (Id) @ 25°C :

5.6A Tc

Rds On Max :

540 mΩ

Height :

4.83mm

Drain to Source Breakdown Voltage :

100V

Rds On (Max) @ Id, Vgs :

540mOhm @ 3.4A, 10V

Power Dissipation :

3.7W

Operating Temperature :

-55°C~175°C TJ

FET Type :

N-Channel

Number of Elements :

1

Gate to Source Voltage (Vgs) :

20V

Min Operating Temperature :

-55°C

Gate Charge (Qg) (Max) @ Vgs :

8.3nC @ 10V

Element Configuration :

Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

Rise Time :

16ns

Weight :

1.437803g

REACH SVHC :

Unknown

Resistance :

540mOhm

Mounting Type :

Surface Mount

Drain to Source Voltage (Vdss) :

100V

Nominal Vgs :

4 V

Number of Channels :

1

Radiation Hardening :

No

Width :

9.65mm

Factory Lead Time :

8 Weeks

Continuous Drain Current (ID) :

5.6A

Published :

2006

Packaging :

Tube

Length :

10.67mm

Power Dissipation-Max :

3.7W Ta 43W Tc

Mount :

Surface Mount

Threshold Voltage :

4V

Turn On Delay Time :

6.9 ns

Max Operating Temperature :

175°C

Lead Free :

Lead Free

Turn-Off Delay Time :

15 ns