IRF510S
- Mfr.Part #
- IRF510S
- Manufacturer
- Vishay
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 5.6A D2PAK
- Stock
- 7,136
- In Stock :
- 7,136
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Width :
- 9.65mm
- Input Capacitance (Ciss) (Max) @ Vds :
- 180pF @ 25V
- RoHS Status :
- Non-RoHS Compliant
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Drain to Source Resistance :
- 540mOhm
- Turn On Delay Time :
- 6.9 ns
- Element Configuration :
- Single
- Vgs (Max) :
- ±20V
- Lead Free :
- Contains Lead
- Operating Temperature :
- -55°C~175°C TJ
- Voltage - Rated DC :
- 100V
- Rds On Max :
- 540 mΩ
- Power Dissipation-Max :
- 3.7W Ta 43W Tc
- Weight :
- 1.437803g
- Length :
- 10.67mm
- Input Capacitance :
- 180pF
- Turn-Off Delay Time :
- 15 ns
- Max Operating Temperature :
- 175°C
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Number of Pins :
- 3
- Gate to Source Voltage (Vgs) :
- 20V
- Height :
- 4.83mm
- Gate Charge (Qg) (Max) @ Vgs :
- 8.3nC @ 10V
- Min Operating Temperature :
- -55°C
- Power Dissipation :
- 43W
- Packaging :
- Tube
- Number of Channels :
- 1
- Drain to Source Voltage (Vdss) :
- 100V
- FET Type :
- N-Channel
- Current Rating :
- 5.6A
- Continuous Drain Current (ID) :
- 5.6A
- Current - Continuous Drain (Id) @ 25°C :
- 5.6A Tc
- Fall Time (Typ) :
- 9.4 ns
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Drain to Source Breakdown Voltage :
- 100V
- Rds On (Max) @ Id, Vgs :
- 540mOhm @ 3.4A, 10V
- Supplier Device Package :
- D2PAK
- Mount :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Surface Mount
- Rise Time :
- 16ns
- Datasheets
- IRF510S
N-Channel Tube 540mOhm @ 3.4A, 10V ±20V 180pF @ 25V 8.3nC @ 10V 100V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRF510S Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 180pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 5.6A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 100V, and this device has a drainage-to-source breakdown voltage of 100VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 15 ns.This device has a drain-to-source resistance of 540mOhm when a gate-to-source voltage (VGS) is applied to bias it into the on state, and when this voltage is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 6.9 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.For this transistor to work, a voltage 100V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
IRF510S Features
a continuous drain current (ID) of 5.6A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 15 ns
single MOSFETs transistor is 540mOhm
a 100V drain to source voltage (Vdss)
IRF510S Applications
There are a lot of Vishay Siliconix
IRF510S applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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