IRF520

Manufacturer :

Harris Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Turn Off Time-Max (toff) :

50ns

Power Dissipation-Max :

60W Tc

Vgs(th) (Max) @ Id :

4V @ 250µA

Mounting Type :

Through Hole

Drain Current-Max (Abs) (ID) :

10A

Pulsed Drain Current-Max (IDM) :

40A

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drain-source On Resistance-Max :

0.27Ohm

Terminal Finish :

Matte Tin (Sn)

Feedback Cap-Max (Crss) :

100 pF

JEDEC-95 Code :

TO-220AB

Configuration :

SINGLE WITH BUILT-IN DIODE

Series :

STripFET™ II

Terminal Position :

Single

Number of Terminations :

3

Operating Temperature :

-55°C~175°C TJ

Qualification Status :

Not Qualified

Vgs (Max) :

±20V

RoHS Status :

Non-RoHS Compliant

Input Capacitance (Ciss) (Max) @ Vds :

460pF @ 25V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Surface Mount :

No

Rds On (Max) @ Id, Vgs :

270m Ω @ 7A, 10V

Reach Compliance Code :

not_compliant

ECCN Code :

EAR99

Transistor Application :

SWITCHING

Package / Case :

TO-220-3

Operating Mode :

ENHANCEMENT MODE

DS Breakdown Voltage-Min :

100V

Current - Continuous Drain (Id) @ 25°C :

10A Tc

JESD-609 Code :

e3

Pin Count :

3

Drain to Source Voltage (Vdss) :

100V

Avalanche Energy Rating (Eas) :

100 mJ

FET Type :

N-Channel

Additional Feature :

FAST SWITCHING

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

22nC @ 10V

Base Part Number :

IRF5

JESD-30 Code :

R-PSFM-T3

Number of Elements :

1

Drive Voltage (Max Rds On,Min Rds On) :

10V

Packaging :

Tube

Turn On Time-Max (ton) :

115ns