IRF510

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Qualification Status :

COMMERCIAL

Operating Mode :

ENHANCEMENT MODE

Vgs (Max) :

±20V

Pbfree Code :

No

Drain-source On Resistance-Max :

0.54Ohm

JESD-609 Code :

e0

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Configuration :

SINGLE WITH BUILT-IN DIODE

Vgs(th) (Max) @ Id :

4V @ 250µA

Packaging :

Tube

Rds On (Max) @ Id, Vgs :

540m Ω @ 3.4A, 10V

Drain Current-Max (Abs) (ID) :

5.6A

Pulsed Drain Current-Max (IDM) :

20A

Drive Voltage (Max Rds On,Min Rds On) :

10V

Surface Mount :

No

Power Dissipation-Max :

43W Tc

Terminal Finish :

TIN LEAD

Input Capacitance (Ciss) (Max) @ Vds :

180pF @ 25V

JEDEC-95 Code :

TO-220AB

Reach Compliance Code :

Unknown

JESD-30 Code :

R-PSFM-T3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

TO-220-3

RoHS Status :

Non-RoHS Compliant

Operating Temperature :

-55°C~175°C TJ

Case Connection :

DRAIN

Transistor Application :

SWITCHING

Mounting Type :

Through Hole

Avalanche Energy Rating (Eas) :

19 mJ

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Terminations :

3

Terminal Position :

Single

Transistor Element Material :

SILICON

FET Type :

N-Channel

Number of Elements :

1

Current - Continuous Drain (Id) @ 25°C :

5.6A Tc

DS Breakdown Voltage-Min :

100V

Drain to Source Voltage (Vdss) :

100V

Gate Charge (Qg) (Max) @ Vgs :

8.3nC @ 10V