IRF510STRLPBF

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Rise Time :

16ns

Input Capacitance (Ciss) (Max) @ Vds :

180pF @ 25V

Max Operating Temperature :

175°C

Gate Charge (Qg) (Max) @ Vgs :

8.3nC @ 10V

Published :

2016

Packaging :

Tape and Reel (TR)

FET Type :

N-Channel

Gate to Source Voltage (Vgs) :

20V

Rds On Max :

540 mΩ

Number of Pins :

3

Continuous Drain Current (ID) :

5.6A

Vgs(th) (Max) @ Id :

4V @ 250µA

Supplier Device Package :

D2PAK

Fall Time (Typ) :

9.4 ns

Turn On Delay Time :

6.9 ns

Rds On (Max) @ Id, Vgs :

540mOhm @ 3.4A, 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Resistance :

540mOhm

Operating Temperature :

-55°C~175°C TJ

Weight :

1.437803g

Current - Continuous Drain (Id) @ 25°C :

5.6A Tc

Length :

10.67mm

Mounting Type :

Surface Mount

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Factory Lead Time :

8 Weeks

Lead Free :

Lead Free

Height :

4.83mm

Drain to Source Resistance :

540mOhm

RoHS Status :

ROHS3 Compliant

Vgs (Max) :

±20V

Number of Elements :

1

Power Dissipation-Max :

43W Tc

Min Operating Temperature :

-55°C

Width :

9.65mm

Element Configuration :

Single

Mount :

Surface Mount

Input Capacitance :

180pF

Number of Channels :

1

Drain to Source Voltage (Vdss) :

100V

Turn-Off Delay Time :

15 ns

Power Dissipation :

3.7W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Radiation Hardening :

No