IRF510STRL
- Mfr.Part #
- IRF510STRL
- Manufacturer
- Vishay
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 5.6A D2PAK
- Stock
- 14,387
- In Stock :
- 14,387
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Max Operating Temperature :
- 175°C
- Element Configuration :
- Single
- Drain to Source Voltage (Vdss) :
- 100V
- Turn On Delay Time :
- 6.9 ns
- Gate to Source Voltage (Vgs) :
- 20V
- Mount :
- Surface Mount
- Power Dissipation-Max :
- 3.7W Ta 43W Tc
- Rds On (Max) @ Id, Vgs :
- 540mOhm @ 3.4A, 10V
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Number of Channels :
- 1
- Drain to Source Resistance :
- 540mOhm
- Width :
- 9.65mm
- Vgs (Max) :
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds :
- 180pF @ 25V
- Mounting Type :
- Surface Mount
- FET Type :
- N-Channel
- RoHS Status :
- Non-RoHS Compliant
- Min Operating Temperature :
- -55°C
- Continuous Drain Current (ID) :
- 5.6A
- Operating Temperature :
- -55°C~175°C TJ
- Gate Charge (Qg) (Max) @ Vgs :
- 8.3nC @ 10V
- Fall Time (Typ) :
- 9.4 ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Weight :
- 1.437803g
- Length :
- 10.67mm
- Input Capacitance :
- 180pF
- Packaging :
- Tape and Reel (TR)
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Height :
- 4.83mm
- Current - Continuous Drain (Id) @ 25°C :
- 5.6A Tc
- Rise Time :
- 16ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Turn-Off Delay Time :
- 15 ns
- Number of Pins :
- 3
- Supplier Device Package :
- D2PAK
- Rds On Max :
- 540 mΩ
- Datasheets
- IRF510STRL
N-Channel Tape & Reel (TR) 540mOhm @ 3.4A, 10V ±20V 180pF @ 25V 8.3nC @ 10V 100V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRF510STRL Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 180pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 5.6A. Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 15 ns. Drain to Source Resistance is the resistance between the drain and the source of a MOSFET when a specific gate-to-source voltage (VGS) is applied to bias the device to the on state, and the resistance of this device is 540mOhm. Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 6.9 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Operating this transistor requires a 100V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.
IRF510STRL Features
a continuous drain current (ID) of 5.6A
the turn-off delay time is 15 ns
single MOSFETs transistor is 540mOhm
a 100V drain to source voltage (Vdss)
IRF510STRL Applications
There are a lot of Vishay Siliconix
IRF510STRL applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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