IRF5851
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- Mfr.Part #
- IRF5851
- Manufacturer
- Infineon Technologies
- Package / Case
- SOT-23-6 Thin, TSOT-23-6
- Datasheet
- Download
- Description
- MOSFET N/PCH 20V 2.7A/2.2A 6TSOP
- Stock
- 21,710
- In Stock ：
- 21,710
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Arrays
- Power - Max :
- 960mW
- Lead Free :
- Contains Lead
- Current - Continuous Drain (Id) @ 25°C :
- 2.7A 2.2A
- Series :
- HEXFET®
- FET Type :
- N and P-Channel
- Drain to Source Voltage (Vdss) :
- 20V
- Published :
- 2002
- Vgs(th) (Max) @ Id :
- 1.25V @ 250μA
- Voltage - Rated DC :
- 20V
- Package / Case :
- SOT-23-6 Thin, TSOT-23-6
- Supplier Device Package :
- 6-TSOP
- Packaging :
- Tube
- Rds On (Max) @ Id, Vgs :
- 90mOhm @ 2.7A, 4.5V
- FET Feature :
- Logic Level Gate
- RoHS Status :
- Non-RoHS Compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Input Capacitance (Ciss) (Max) @ Vds :
- 400pF @ 15V
- Mounting Type :
- Surface Mount
- Gate Charge (Qg) (Max) @ Vgs :
- 6nC @ 4.5V
- Datasheets
- IRF5851
IRF5851 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Infineon Technologies stock available at
IRF5851 Description
These N-channel and P-channel MOSFET from International Rectifier use advanced technology to achieve extremely low on-resistance per silicon area. This advantage provides designers with extremely efficient devices for use in battery and load management applications. This dual TSOP-6 package is ideal for applications where PCB space is tight and maximum functionality is required. Because each package has two chips, IRF5851 can provide the function of two SOT-23 packages in a smaller footprint. Its unique heat dissipation design and RDS (on) reduction improve the current handling capacity.
IRF5851 Features
Ultra Low On-Resistance
Dual N and P Channel MOSFET
Surface Mount
Available in Tape & Reel
Low Gate Charge
IRF5851 Applications
battery applications
load management applications.
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