IRF5850TR

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Current Rating :

-2.2A

FET Type :

2 P-Channel (Dual)

Lead Free :

Contains Lead

Supplier Device Package :

6-TSOP

Max Power Dissipation :

960mW

FET Feature :

Logic Level Gate

Current - Continuous Drain (Id) @ 25°C :

2.2A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Operating Temperature :

-55°C~150°C TJ

Vgs(th) (Max) @ Id :

1.2V @ 250µA

Mount :

Surface Mount

Published :

2003

Packaging :

Tape and Reel (TR)

Series :

HEXFET®

Continuous Drain Current (ID) :

2.2A

Rds On Max :

135 mΩ

Rds On (Max) @ Id, Vgs :

135mOhm @ 2.2A, 4.5V

Mounting Type :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

5.4nC @ 4.5V

Drain to Source Breakdown Voltage :

-20V

Max Operating Temperature :

150°C

Min Operating Temperature :

-55°C

RoHS Status :

Non-RoHS Compliant

Power - Max :

960mW

Input Capacitance :

320pF

Number of Pins :

6

Input Capacitance (Ciss) (Max) @ Vds :

320pF @ 15V

Voltage - Rated DC :

-20V

Rise Time :

14ns

Drain to Source Voltage (Vdss) :

20V