IRF5850
- Mfr.Part #
- IRF5850
- Manufacturer
- Infineon Technologies
- Package / Case
- SOT-23-6 Thin, TSOT-23-6
- Datasheet
- Download
- Description
- MOSFET 2P-CH 20V 2.2A 6TSOP
- Stock
- 37,173
- In Stock :
- 37,173
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Arrays
- FET Feature :
- Logic Level Gate
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Input Capacitance (Ciss) (Max) @ Vds :
- 320pF @ 15V
- Power - Max :
- 960mW
- Rds On (Max) @ Id, Vgs :
- 135m Ω @ 2.2A, 4.5V
- Vgs(th) (Max) @ Id :
- 1.2V @ 250µA
- Current - Continuous Drain (Id) @ 25°C :
- 2.2A
- Drain to Source Voltage (Vdss) :
- 20V
- RoHS Status :
- Non-RoHS Compliant
- Gate Charge (Qg) (Max) @ Vgs :
- 5.4nC @ 4.5V
- FET Type :
- 2 P-Channel (Dual)
- Package / Case :
- SOT-23-6 Thin, TSOT-23-6
- Mounting Type :
- Surface Mount
- Packaging :
- Tube
- Published :
- 2003
- Datasheets
- IRF5850

IRF5850 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Infineon Technologies stock available at
IRF5850 Description
These N-Channel HEXFET? power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infrared, or wave soldering technique .
IRF5850 Features
Ultra Low On-Resistance
Dual N-Channel MOSFET
Surface Mount
Available in Tape & Reel
Lead-Free
IRF5850 Applications
This benefit provides the designer with an extremely efficient device for use in battery and load management applications.
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