IPB79CN10N G

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Surface Mount :

yes

Drain Current-Max (Abs) (ID) :

13A

Input Capacitance (Ciss) (Max) @ Vds :

716pF @ 50V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e3

Series :

OptiMOS™

Transistor Element Material :

SILICON

Pulsed Drain Current-Max (IDM) :

52A

Avalanche Energy Rating (Eas) :

17 mJ

Transistor Application :

SWITCHING

Power Dissipation-Max :

31W Tc

Operating Temperature :

-55°C~175°C TJ

Vgs(th) (Max) @ Id :

4V @ 12µA

RoHS Status :

RoHS Compliant

Operating Mode :

ENHANCEMENT MODE

Terminal Form :

Gull wing

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Current - Continuous Drain (Id) @ 25°C :

13A Tc

Qualification Status :

Not Qualified

Rds On (Max) @ Id, Vgs :

79m Ω @ 13A, 10V

Case Connection :

DRAIN

Configuration :

SINGLE WITH BUILT-IN DIODE

Reach Compliance Code :

Compliant

ECCN Code :

EAR99

Number of Elements :

1

Packaging :

Tape and Reel (TR)

Drain-source On Resistance-Max :

0.079Ohm

Peak Reflow Temperature (Cel) :

260

Mounting Type :

Surface Mount

Published :

2007

JESD-30 Code :

R-PSSO-G2

DS Breakdown Voltage-Min :

100V

Gate Charge (Qg) (Max) @ Vgs :

11nC @ 10V

Terminal Position :

Single

Number of Terminations :

2

Drive Voltage (Max Rds On,Min Rds On) :

10V

FET Type :

N-Channel

Time@Peak Reflow Temperature-Max (s) :

40

Pin Count :

4

Terminal Finish :

MATTE TIN

Vgs (Max) :

±20V

Drain to Source Voltage (Vdss) :

100V