IPB79CN10N G

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Mfr.Part #
IPB79CN10N G
Manufacturer
Infineon Technologies
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Datasheet
Download
Description
MOSFET N-CH 100V 13A D2PAK
Stock
27,973
In Stock :
27,973

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - FETs, MOSFETs - Single
RoHS Status :
RoHS Compliant
Vgs(th) (Max) @ Id :
4V @ 12µA
Input Capacitance (Ciss) (Max) @ Vds :
716pF @ 50V
Gate Charge (Qg) (Max) @ Vgs :
11nC @ 10V
Operating Temperature :
-55°C~175°C TJ
Number of Elements :
1
Terminal Position :
Single
FET Type :
N-Channel
Surface Mount :
yes
Transistor Element Material :
SILICON
Transistor Application :
SWITCHING
Power Dissipation-Max :
31W Tc
Time@Peak Reflow Temperature-Max (s) :
40
JESD-609 Code :
e3
Mounting Type :
Surface Mount
JESD-30 Code :
R-PSSO-G2
Terminal Form :
Gull wing
Pulsed Drain Current-Max (IDM) :
52A
ECCN Code :
EAR99
Vgs (Max) :
±20V
Operating Mode :
ENHANCEMENT MODE
Reach Compliance Code :
Compliant
Number of Terminations :
2
Rds On (Max) @ Id, Vgs :
79m Ω @ 13A, 10V
Current - Continuous Drain (Id) @ 25°C :
13A Tc
Terminal Finish :
MATTE TIN
Drain Current-Max (Abs) (ID) :
13A
Peak Reflow Temperature (Cel) :
260
Configuration :
SINGLE WITH BUILT-IN DIODE
Pin Count :
4
Avalanche Energy Rating (Eas) :
17 mJ
Qualification Status :
Not Qualified
Drain-source On Resistance-Max :
0.079Ohm
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
DS Breakdown Voltage-Min :
100V
Published :
2007
Case Connection :
DRAIN
Package / Case :
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain to Source Voltage (Vdss) :
100V
Series :
OptiMOS™
Packaging :
Tape and Reel (TR)
Drive Voltage (Max Rds On,Min Rds On) :
10V
Datasheets
IPB79CN10N G
Introducing Transistors - FETs, MOSFETs - Single Infineon Technologies IPB79CN10N G from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~175°C TJ, Mounting Type:Surface Mount, Number of Terminations:2, Package / Case:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, IPB79CN10N G pinout, IPB79CN10N G datasheet PDF, IPB79CN10N G amp .Beyond Transistors - FETs, MOSFETs - Single Infineon Technologies IPB79CN10N G ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies IPB79CN10N G


N-Channel Tape & Reel (TR) 79m Ω @ 13A, 10V ±20V 716pF @ 50V 11nC @ 10V 100V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IPB79CN10N G Overview


In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 17 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 716pF @ 50V.The drain current is the maximum continuous current this device can conduct, which is 13A.Pulsed drain current is maximum rated peak drain current 52A.A normal operation of the DS requires keeping the breakdown voltage above 100V.This transistor requires a drain-source voltage (Vdss) of 100V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).

IPB79CN10N G Features


the avalanche energy rating (Eas) is 17 mJ
based on its rated peak drain current 52A.
a 100V drain to source voltage (Vdss)


IPB79CN10N G Applications


There are a lot of Infineon Technologies
IPB79CN10N G applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
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