IPB70P04P409ATMA1

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Mfr.Part #
IPB70P04P409ATMA1
Manufacturer
Infineon Technologies
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Datasheet
Download
Description
MOSFET N-CH 40V 72A D2PAK
Stock
27,239
In Stock :
27,239

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - FETs, MOSFETs - Single
Vgs (Max) :
±20V
Packaging :
Tape and Reel (TR)
Factory Lead Time :
14 Weeks
Rds On (Max) @ Id, Vgs :
9.1m Ω @ 70A, 10V
Drain Current-Max (Abs) (ID) :
72A
Mounting Type :
Surface Mount
Terminal Finish :
Tin (Sn)
Power Dissipation :
75W
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Input Capacitance (Ciss) (Max) @ Vds :
4810pF @ 25V
JESD-609 Code :
e3
Number of Pins :
3
Polarity/Channel Type :
P-Channel
Drive Voltage (Max Rds On,Min Rds On) :
10V
Gate Charge (Qg) (Max) @ Vgs :
70nC @ 10V
Current - Continuous Drain (Id) @ 25°C :
72A Tc
Case Connection :
DRAIN
Pulsed Drain Current-Max (IDM) :
288A
Operating Temperature :
-55°C~175°C TJ
JESD-30 Code :
R-PSSO-G2
Continuous Drain Current (ID) :
-70A
Max Dual Supply Voltage :
-40V
Vgs(th) (Max) @ Id :
4V @ 120µA
Number of Elements :
1
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Operating Mode :
ENHANCEMENT MODE
ECCN Code :
EAR99
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Reach Compliance Code :
not_compliant
Turn-Off Delay Time :
24 ns
Gate to Source Voltage (Vgs) :
20V
Number of Terminations :
2
Published :
2011
Package / Case :
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Power Dissipation-Max :
75W Tc
Drain-source On Resistance-Max :
0.0094Ohm
Drain to Source Breakdown Voltage :
-40V
Fall Time (Typ) :
31 ns
Height :
4.4mm
Terminal Form :
Gull wing
Element Configuration :
Single
Mount :
Surface Mount
FET Type :
N-Channel
Halogen Free :
Halogen Free
Width :
9.25mm
RoHS Status :
ROHS3 Compliant
Turn On Delay Time :
19 ns
Drain to Source Voltage (Vdss) :
40V
Rise Time :
15ns
Length :
10mm
Transistor Element Material :
SILICON
Series :
Automotive, AEC-Q101, OptiMOS™
Avalanche Energy Rating (Eas) :
24 mJ
Lead Free :
Contains Lead
Datasheets
IPB70P04P409ATMA1
Introducing Transistors - FETs, MOSFETs - Single Infineon Technologies IPB70P04P409ATMA1 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Number of Pins:3, Operating Temperature:-55°C~175°C TJ, Number of Terminations:2, Package / Case:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, IPB70P04P409ATMA1 pinout, IPB70P04P409ATMA1 datasheet PDF, IPB70P04P409ATMA1 amp .Beyond Transistors - FETs, MOSFETs - Single Infineon Technologies IPB70P04P409ATMA1 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies IPB70P04P409ATMA1


N-Channel Tape & Reel (TR) 9.1m Ω @ 70A, 10V ±20V 4810pF @ 25V 70nC @ 10V 40V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IPB70P04P409ATMA1 Overview


The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 24 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 4810pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has -70A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is -40V, and this device has a drainage-to-source breakdown voltage of -40VV.Drain current refers to the maximum continuous current a device can conduct, and it is 72A.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 24 ns.Peak drain current is 288A, which is the maximum pulsed drain current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 19 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.In addition to -40V, it supports dual voltages up to the maximum.For this transistor to work, a voltage 40V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.

IPB70P04P409ATMA1 Features


the avalanche energy rating (Eas) is 24 mJ
a continuous drain current (ID) of -70A
a drain-to-source breakdown voltage of -40V voltage
the turn-off delay time is 24 ns
based on its rated peak drain current 288A.
a 40V drain to source voltage (Vdss)


IPB70P04P409ATMA1 Applications


There are a lot of Infineon Technologies
IPB70P04P409ATMA1 applications of single MOSFETs transistors.


  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
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