IPB70P04P409ATMA1
- Mfr.Part #
- IPB70P04P409ATMA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 40V 72A D2PAK
- Stock
- 27,239
- In Stock :
- 27,239
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Vgs (Max) :
- ±20V
- Packaging :
- Tape and Reel (TR)
- Factory Lead Time :
- 14 Weeks
- Rds On (Max) @ Id, Vgs :
- 9.1m Ω @ 70A, 10V
- Drain Current-Max (Abs) (ID) :
- 72A
- Mounting Type :
- Surface Mount
- Terminal Finish :
- Tin (Sn)
- Power Dissipation :
- 75W
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Input Capacitance (Ciss) (Max) @ Vds :
- 4810pF @ 25V
- JESD-609 Code :
- e3
- Number of Pins :
- 3
- Polarity/Channel Type :
- P-Channel
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Gate Charge (Qg) (Max) @ Vgs :
- 70nC @ 10V
- Current - Continuous Drain (Id) @ 25°C :
- 72A Tc
- Case Connection :
- DRAIN
- Pulsed Drain Current-Max (IDM) :
- 288A
- Operating Temperature :
- -55°C~175°C TJ
- JESD-30 Code :
- R-PSSO-G2
- Continuous Drain Current (ID) :
- -70A
- Max Dual Supply Voltage :
- -40V
- Vgs(th) (Max) @ Id :
- 4V @ 120µA
- Number of Elements :
- 1
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Operating Mode :
- ENHANCEMENT MODE
- ECCN Code :
- EAR99
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Reach Compliance Code :
- not_compliant
- Turn-Off Delay Time :
- 24 ns
- Gate to Source Voltage (Vgs) :
- 20V
- Number of Terminations :
- 2
- Published :
- 2011
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Power Dissipation-Max :
- 75W Tc
- Drain-source On Resistance-Max :
- 0.0094Ohm
- Drain to Source Breakdown Voltage :
- -40V
- Fall Time (Typ) :
- 31 ns
- Height :
- 4.4mm
- Terminal Form :
- Gull wing
- Element Configuration :
- Single
- Mount :
- Surface Mount
- FET Type :
- N-Channel
- Halogen Free :
- Halogen Free
- Width :
- 9.25mm
- RoHS Status :
- ROHS3 Compliant
- Turn On Delay Time :
- 19 ns
- Drain to Source Voltage (Vdss) :
- 40V
- Rise Time :
- 15ns
- Length :
- 10mm
- Transistor Element Material :
- SILICON
- Series :
- Automotive, AEC-Q101, OptiMOS™
- Avalanche Energy Rating (Eas) :
- 24 mJ
- Lead Free :
- Contains Lead
- Datasheets
- IPB70P04P409ATMA1

N-Channel Tape & Reel (TR) 9.1m Ω @ 70A, 10V ±20V 4810pF @ 25V 70nC @ 10V 40V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IPB70P04P409ATMA1 Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 24 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 4810pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has -70A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is -40V, and this device has a drainage-to-source breakdown voltage of -40VV.Drain current refers to the maximum continuous current a device can conduct, and it is 72A.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 24 ns.Peak drain current is 288A, which is the maximum pulsed drain current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 19 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.In addition to -40V, it supports dual voltages up to the maximum.For this transistor to work, a voltage 40V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
IPB70P04P409ATMA1 Features
the avalanche energy rating (Eas) is 24 mJ
a continuous drain current (ID) of -70A
a drain-to-source breakdown voltage of -40V voltage
the turn-off delay time is 24 ns
based on its rated peak drain current 288A.
a 40V drain to source voltage (Vdss)
IPB70P04P409ATMA1 Applications
There are a lot of Infineon Technologies
IPB70P04P409ATMA1 applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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