IPB70N12S3L12ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tape and Reel (TR)

Published :

2016

Terminal Finish :

Tin (Sn)

ECCN Code :

EAR99

Avalanche Energy Rating (Eas) :

410 mJ

Transistor Element Material :

SILICON

Drain-source On Resistance-Max :

0.0155Ohm

Number of Terminations :

2

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drain Current-Max (Abs) (ID) :

70A

Number of Elements :

1

Reach Compliance Code :

not_compliant

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Terminal Form :

Gull wing

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Pbfree Code :

yes

DS Breakdown Voltage-Min :

120V

Operating Mode :

ENHANCEMENT MODE

Pulsed Drain Current-Max (IDM) :

280A

JESD-609 Code :

e3

Polarity/Channel Type :

N-Channel

Surface Mount :

yes

JEDEC-95 Code :

TO-263AB

JESD-30 Code :

R-PSSO-G2

Configuration :

SINGLE WITH BUILT-IN DIODE

Reference Standard :

AEC-Q101

Terminal Position :

Single

Case Connection :

DRAIN