IPB70N10SL16ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±20V

Configuration :

SINGLE WITH BUILT-IN DIODE

Power Dissipation :

250W

FET Type :

N-Channel

Rds On (Max) @ Id, Vgs :

16m Ω @ 50A, 10V

Packaging :

Tape and Reel (TR)

Terminal Position :

Single

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Power Dissipation-Max :

250W Tc

Vgs(th) (Max) @ Id :

2V @ 2mA

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Input Capacitance (Ciss) (Max) @ Vds :

4540pF @ 25V

Max Dual Supply Voltage :

100V

Fall Time (Typ) :

95 ns

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Drain-source On Resistance-Max :

0.025Ohm

Gate Charge (Qg) (Max) @ Vgs :

240nC @ 10V

Operating Temperature :

-55°C~175°C TJ

Operating Mode :

ENHANCEMENT MODE

Continuous Drain Current (ID) :

70A

Terminal Form :

Gull wing

Reach Compliance Code :

not_compliant

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Mounting Type :

Surface Mount

RoHS Status :

ROHS3 Compliant

Halogen Free :

Halogen Free

JESD-30 Code :

R-PSSO-G2

Avalanche Energy Rating (Eas) :

700 mJ

Published :

2006

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Lead Free :

Contains Lead

Additional Feature :

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

70A Tc

Turn-Off Delay Time :

250 ns

Number of Elements :

1

Gate to Source Voltage (Vgs) :

20V

Pulsed Drain Current-Max (IDM) :

280A

Turn On Delay Time :

70 ns

Mount :

Surface Mount

Terminal Finish :

Tin (Sn)

Number of Terminations :

2

Series :

SIPMOS®

JESD-609 Code :

e3

Factory Lead Time :

10 Weeks