IPB70N04S3-07

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

JESD-609 Code :

e3

Input Capacitance (Ciss) (Max) @ Vds :

2700pF @ 25V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Terminal Form :

Gull wing

Series :

OptiMOS™

Published :

2007

Packaging :

Tape and Reel (TR)

Rds On (Max) @ Id, Vgs :

6.2m Ω @ 70A, 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Finish :

Tin (Sn)

Vgs(th) (Max) @ Id :

4V @ 50μA

Element Configuration :

Single

Turn-Off Delay Time :

17 ns

Drain-source On Resistance-Max :

0.0071Ohm

Fall Time (Typ) :

7 ns

Current - Continuous Drain (Id) @ 25°C :

80A Tc

FET Type :

N-Channel

Operating Temperature :

-55°C~175°C TJ

Drive Voltage (Max Rds On,Min Rds On) :

10V

Case Connection :

DRAIN

Pin Count :

4

Height :

4.4mm

Pbfree Code :

yes

Rise Time :

8ns

Max Dual Supply Voltage :

40V

Number of Elements :

1

Additional Feature :

ULTRA LOW RESISTANCE

Drain to Source Breakdown Voltage :

40V

Length :

10mm

JESD-30 Code :

R-PSSO-G2

RoHS Status :

RoHS Compliant

Avalanche Energy Rating (Eas) :

145 mJ

Turn On Delay Time :

13 ns

Number of Pins :

3

Gate to Source Voltage (Vgs) :

20V

Width :

9.25mm

Transistor Element Material :

SILICON

HTS Code :

8541.29.00.95

Number of Terminations :

2

Mounting Type :

Surface Mount

ECCN Code :

EAR99

Gate Charge (Qg) (Max) @ Vgs :

40nC @ 10V

Continuous Drain Current (ID) :

80A

Power Dissipation-Max :

79W Tc

Vgs (Max) :

±20V

Halogen Free :

Halogen Free

Surface Mount :

yes

Operating Mode :

ENHANCEMENT MODE

Qualification Status :

Not Qualified

Power Dissipation :

79W

Drain Current-Max (Abs) (ID) :

70A