IPB77N06S212ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

Case Connection :

DRAIN

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Terminations :

2

Avalanche Energy Rating (Eas) :

280 mJ

JESD-30 Code :

R-PSSO-G2

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Gate Charge (Qg) (Max) @ Vgs :

60nC @ 10V

Operating Temperature :

-55°C~175°C TJ

Mounting Type :

Surface Mount

FET Type :

N-Channel

Number of Elements :

1

Pulsed Drain Current-Max (IDM) :

308A

Current - Continuous Drain (Id) @ 25°C :

77A Tc

DS Breakdown Voltage-Min :

55V

Rds On (Max) @ Id, Vgs :

11.7m Ω @ 38A, 10V

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE

Series :

OptiMOS™

Surface Mount :

yes

RoHS Status :

ROHS3 Compliant

Drain to Source Voltage (Vdss) :

55V

Packaging :

Tape and Reel (TR)

ECCN Code :

EAR99

Terminal Position :

Single

Vgs(th) (Max) @ Id :

4V @ 93µA

Published :

2006

Vgs (Max) :

±20V

Terminal Form :

Gull wing

Input Capacitance (Ciss) (Max) @ Vds :

1770pF @ 25V

Drain-source On Resistance-Max :

0.0117Ohm

Power Dissipation-Max :

158W Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain Current-Max (Abs) (ID) :

77A