IPB77N06S3-09

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

Vgs (Max) :

±20V

Rds On (Max) @ Id, Vgs :

8.8m Ω @ 39A, 10V

Transistor Element Material :

SILICON

Time@Peak Reflow Temperature-Max (s) :

40

Terminal Form :

Gull wing

Pulsed Drain Current-Max (IDM) :

308A

Rise Time :

51ns

Current - Continuous Drain (Id) @ 25°C :

77A Tc

Published :

2007

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e3

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

JESD-30 Code :

R-PSSO-G2

Power Dissipation-Max :

107W Tc

Gate to Source Voltage (Vgs) :

20V

Turn-Off Delay Time :

29 ns

Drain to Source Breakdown Voltage :

55V

Current Rating :

77A

Element Configuration :

Single

Mounting Type :

Surface Mount

Drive Voltage (Max Rds On,Min Rds On) :

10V

Continuous Drain Current (ID) :

77A

Case Connection :

DRAIN

ECCN Code :

EAR99

FET Type :

N-Channel

Input Capacitance (Ciss) (Max) @ Vds :

5335pF @ 25V

Series :

OptiMOS™

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

-55°C~175°C TJ

Voltage - Rated DC :

55V

Mount :

Surface Mount

Packaging :

Tape and Reel (TR)

Power Dissipation :

107W

Transistor Application :

SWITCHING

Pin Count :

4

Lead Free :

Lead Free

Fall Time (Typ) :

51 ns

Vgs(th) (Max) @ Id :

4V @ 55μA

RoHS Status :

RoHS Compliant

Gate Charge (Qg) (Max) @ Vgs :

103nC @ 10V

Terminal Finish :

MATTE TIN

Avalanche Energy Rating (Eas) :

170 mJ

Qualification Status :

Not Qualified

Additional Feature :

AVALANCHE RATED

Drain-source On Resistance-Max :

0.0088Ohm

Peak Reflow Temperature (Cel) :

260

Number of Terminations :

2