IPB70N10S3L12ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Element Material :

SILICON

Drain-source On Resistance-Max :

0.012Ohm

Series :

OptiMOS™

Current - Continuous Drain (Id) @ 25°C :

70A Tc

Vgs(th) (Max) @ Id :

2.4V @ 83μA

Pulsed Drain Current-Max (IDM) :

280A

Vgs (Max) :

±20V

Case Connection :

DRAIN

ECCN Code :

EAR99

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Power Dissipation-Max :

125W Tc

Terminal Form :

Gull wing

Additional Feature :

LOGIC LEVEL COMPATIBLE

Operating Temperature :

-55°C~175°C TJ

Surface Mount :

yes

Rds On (Max) @ Id, Vgs :

11.8m Ω @ 70A, 10V

Factory Lead Time :

14 Weeks

Packaging :

Tape and Reel (TR)

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

80nC @ 10V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Number of Elements :

1

Operating Mode :

ENHANCEMENT MODE

JESD-30 Code :

R-PSSO-G2

FET Type :

N-Channel

Avalanche Energy Rating (Eas) :

154 mJ

Number of Terminations :

2

DS Breakdown Voltage-Min :

100V

Published :

2012

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drain to Source Voltage (Vdss) :

100V

Mounting Type :

Surface Mount

Drain Current-Max (Abs) (ID) :

70A

Terminal Position :

Single

Input Capacitance (Ciss) (Max) @ Vds :

5550pF @ 25V