IPB70N04S406ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

-55°C~175°C TJ

JESD-609 Code :

e3

RoHS Status :

ROHS3 Compliant

Fall Time (Typ) :

9 ns

Halogen Free :

Halogen Free

Configuration :

SINGLE WITH BUILT-IN DIODE

Lead Free :

Contains Lead

Gate Charge (Qg) (Max) @ Vgs :

32nC @ 10V

Published :

2010

ECCN Code :

EAR99

Drain-source On Resistance-Max :

0.0062Ohm

Current - Continuous Drain (Id) @ 25°C :

70A Tc

FET Type :

N-Channel

JESD-30 Code :

R-PSSO-G2

Factory Lead Time :

16 Weeks

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Vgs(th) (Max) @ Id :

4V @ 26μA

Vgs (Max) :

±20V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Terminal Position :

Single

Gate to Source Voltage (Vgs) :

20V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Power Dissipation-Max :

58W Tc

Operating Mode :

ENHANCEMENT MODE

Avalanche Energy Rating (Eas) :

72 mJ

Transistor Element Material :

SILICON

Max Dual Supply Voltage :

40V

Rds On (Max) @ Id, Vgs :

6.2m Ω @ 70A, 10V

Terminal Form :

Gull wing

Input Capacitance (Ciss) (Max) @ Vds :

2550pF @ 25V

Mounting Type :

Surface Mount

Number of Pins :

3

Turn-Off Delay Time :

7 ns

Series :

OptiMOS™

Packaging :

Tape and Reel (TR)

Number of Elements :

1

Pulsed Drain Current-Max (IDM) :

280A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Continuous Drain Current (ID) :

70A

Turn On Delay Time :

8 ns

Terminal Finish :

Tin (Sn)

Rise Time :

10ns

Mount :

Surface Mount

Number of Terminations :

2