IPB70N12S311ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Element Material :

SILICON

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

RoHS Status :

ROHS3 Compliant

Configuration :

SINGLE WITH BUILT-IN DIODE

Operating Temperature (Min) :

-55°C

Case Connection :

DRAIN

Packaging :

Tape and Reel (TR)

JESD-30 Code :

R-PSSO-G2

Polarity/Channel Type :

N-Channel

Published :

2016

Avalanche Energy Rating (Eas) :

410 mJ

Drain Current-Max (Abs) (ID) :

70A

ECCN Code :

EAR99

Factory Lead Time :

14 Weeks

Drain-source On Resistance-Max :

0.0113Ohm

Terminal Position :

Single

DS Breakdown Voltage-Min :

120V

Number of Elements :

1

Number of Terminations :

2

Pulsed Drain Current-Max (IDM) :

280A

Operating Mode :

ENHANCEMENT MODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Surface Mount :

yes

JEDEC-95 Code :

TO-263AB

Terminal Form :

Gull wing

Reference Standard :

AEC-Q101

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Pbfree Code :

yes