IPB77N06S212ATMA2

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

-55°C~175°C TJ

RoHS Status :

ROHS3 Compliant

Gate to Source Voltage (Vgs) :

20V

Current - Continuous Drain (Id) @ 25°C :

77A Tc

Number of Elements :

1

Case Connection :

DRAIN

Continuous Drain Current (ID) :

77A

Power Dissipation :

158W

Packaging :

Tape and Reel (TR)

JESD-30 Code :

R-PSSO-G2

Mounting Type :

Surface Mount

Turn On Delay Time :

14 ns

Input Capacitance (Ciss) (Max) @ Vds :

1770pF @ 25V

Element Configuration :

Single

Factory Lead Time :

10 Weeks

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

4V @ 93µA

Number of Pins :

3

Reach Compliance Code :

not_compliant

Vgs (Max) :

±20V

Terminal Form :

Gull wing

Fall Time (Typ) :

26 ns

Drain-source On Resistance-Max :

0.0117Ohm

Published :

2006

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drain to Source Breakdown Voltage :

55V

Power Dissipation-Max :

158W Tc

Drive Voltage (Max Rds On,Min Rds On) :

10V

Turn-Off Delay Time :

34 ns

Number of Terminations :

2

ECCN Code :

EAR99

Series :

OptiMOS™

Rds On (Max) @ Id, Vgs :

11.7m Ω @ 38A, 10V

Halogen Free :

Halogen Free

Gate Charge (Qg) (Max) @ Vgs :

60nC @ 10V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Pbfree Code :

yes

Max Dual Supply Voltage :

55V

Mount :

Surface Mount

Rise Time :

27ns

FET Type :

N-Channel

Transistor Element Material :

SILICON

Avalanche Energy Rating (Eas) :

280 mJ