IPB70N04S406

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Pins :

3

Min Operating Temperature :

-55 °C

Length :

10 mm

Power Dissipation-Max (Ta=25°C) :

58W Tc

Subcategory :

MOSFETs

Lead Free :

Contains Lead

Tradename :

OptiMOS

Vgs(th) (Max) @ Id :

4V @ 26uA

Rds On (Max) @ Id, Vgs :

6.5mΩ@ 70A,10V

Max Operating Temperature :

175 °C

Width :

9.25 mm

Minimum Operating Temperature :

- 55 C

Halogen Free :

Halogen Free

Input Capacitance :

2.55 nF

Brand :

Infineon Technologies

RoHS :

Compliant

Max Power Dissipation :

58 W

Turn-Off Delay Time :

7 ns

Max Dual Supply Voltage :

40 V

Maximum Operating Temperature :

+ 175 C

Rds On Max :

6.2 mΩ

Power Dissipation :

58 W

Gate to Source Voltage (Vgs) :

20 V

Continuous Drain Current (ID) :

70 A

Transistor Polarity :

N-Channel

Continuous Drain Current (Id) @ 25°C :

70A Tc

Package Quantity :

1000

Channel Mode :

Enhancement

Product Type :

MOSFET

Rise Time :

10 ns

Drain to Source Voltage (Vdss) :

40V

Product Category :

MOSFET

Mounting Style :

SMD/SMT

RoHS Status :

RoHS Compliant

Qualification :

AEC-Q101

FET Type :

N Channel

Series :

OptiMOS-T2

Configuration :

Single

Mount :

Surface Mount

Number of Channels :

1 Channel

Manufacturer :

Infineon

Turn-On Delay Time :

8 ns

Packaging :

Tape and Reel (TR)

Lifecycle Status :

Production (Last Updated: 2 years ago)

Technology :

Si

Height :

4.4 mm

Package / Case :

PG-TO263-3

Transistor Type :

1 N-Channel