IPB70N04S406

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Turn-Off Delay Time :

7 ns

Power Dissipation-Max (Ta=25°C) :

58W Tc

Rds On (Max) @ Id, Vgs :

6.5mΩ@ 70A,10V

Number of Channels :

1 Channel

Max Dual Supply Voltage :

40 V

Power Dissipation :

58 W

Product Category :

MOSFET

Input Capacitance :

2.55 nF

Package / Case :

PG-TO263-3

Continuous Drain Current (Id) @ 25°C :

70A Tc

RoHS Status :

RoHS Compliant

Subcategory :

MOSFETs

Max Operating Temperature :

175 °C

RoHS :

Compliant

Max Power Dissipation :

58 W

Number of Pins :

3

Continuous Drain Current (ID) :

70 A

Product Type :

MOSFET

Configuration :

Single

Mounting Style :

SMD/SMT

Vgs(th) (Max) @ Id :

4V @ 26uA

Packaging :

Tape and Reel (TR)

Channel Mode :

Enhancement

Length :

10 mm

Min Operating Temperature :

-55 °C

Lead Free :

Contains Lead

Rise Time :

10 ns

Mount :

Surface Mount

Package Quantity :

1000

Minimum Operating Temperature :

- 55 C

Gate to Source Voltage (Vgs) :

20 V

Series :

OptiMOS-T2

Maximum Operating Temperature :

+ 175 C

Technology :

Si

Manufacturer :

Infineon

Brand :

Infineon Technologies

Lifecycle Status :

Production (Last Updated: 2 years ago)

Qualification :

AEC-Q101

Transistor Polarity :

N-Channel

FET Type :

N Channel

Tradename :

OptiMOS

Height :

4.4 mm

Turn-On Delay Time :

8 ns

Halogen Free :

Halogen Free

Rds On Max :

6.2 mΩ

Width :

9.25 mm

Transistor Type :

1 N-Channel

Drain to Source Voltage (Vdss) :

40V