IPB19DP10NMATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Polarity :

P-Channel

Drain to Source Voltage (Vdss) :

100 V

FET Feature :

-

Package :

Digi-Reel?

Power Dissipation :

83W

Number of Elements per Chip :

1

Input Capacitance (Ciss) (Max) @ Vds :

2000 pF @ 50 V

Maximum Operating Temperature :

+ 175 C

Subcategory :

MOSFETs

Pin Count :

3

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Package Type :

D2PAK (TO-263)

Vgs (Max) :

±20V

Channel Mode :

Enhancement

Power Dissipation (Max) :

3.8W (Ta), 83W (Tc)

Product Category :

MOSFET

Current - Continuous Drain (Id) @ 25°C :

2.9A (Ta), 13.8A (Tc)

Channel Type :

P

Continuous Drain Current Id :

13.8A

MSL :

MSL 1 - Unlimited

Mounting Type :

Surface Mount

Drive Voltage (Max Rds On, Min Rds On) :

10V

Product :

MOSFET

Base Product Number :

IPB19D

FET Type :

P-Channel

Vgs(th) (Max) @ Id :

4V @ 1.04mA

Rds On (Max) @ Id, Vgs :

185mOhm @ 12A, 10V

Product Type :

MOSFET

Packaging :

Cut Tape

Manufacturer :

Infineon

Brand :

Infineon Technologies

Minimum Operating Temperature :

- 55 C

Qualification :

-

Gate Charge (Qg) (Max) @ Vgs :

45 nC @ 10 V

Mounting Style :

SMD/SMT

Series :

OptiMOS?

Supplier Device Package :

PG-TO263-3

RoHS :

Details

Number of Channels :

1 Channel

Operating Temperature :

-55°C ~ 175°C (TJ)

Product Status :

Active