IPB100N06S2L05ATMA2

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Element Configuration :

Single

Avalanche Energy Rating (Eas) :

810 mJ

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Number of Pins :

3

Additional Feature :

LOGIC LEVEL COMPATIBLE

Drain-source On Resistance-Max :

0.0056Ohm

Gate Charge (Qg) (Max) @ Vgs :

230nC @ 10V

Power Dissipation-Max :

300W Tc

Vgs(th) (Max) @ Id :

2V @ 250μA

Height :

4.57mm

Transistor Element Material :

SILICON

Length :

10.31mm

FET Type :

N-Channel

Case Connection :

DRAIN

Series :

OptiMOS™

Turn On Delay Time :

18 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn-Off Delay Time :

98 ns

Gate to Source Voltage (Vgs) :

20V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Pulsed Drain Current-Max (IDM) :

400A

Terminal Form :

Gull wing

Factory Lead Time :

10 Weeks

Rise Time :

25ns

Halogen Free :

Halogen Free

Current - Continuous Drain (Id) @ 25°C :

100A Tc

Reach Compliance Code :

not_compliant

RoHS Status :

ROHS3 Compliant

Mount :

Surface Mount

Max Dual Supply Voltage :

55V

Continuous Drain Current (ID) :

100A

Fall Time (Typ) :

24 ns

Mounting Type :

Surface Mount

Number of Terminations :

2

Packaging :

Tape and Reel (TR)

Number of Elements :

1

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

JESD-30 Code :

R-PSSO-G2

Width :

9.45mm

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Rds On (Max) @ Id, Vgs :

4.4m Ω @ 80A, 10V

Power Dissipation :

300W

ECCN Code :

EAR99

Operating Mode :

ENHANCEMENT MODE

Pbfree Code :

yes

Drain to Source Breakdown Voltage :

55V

Vgs (Max) :

±20V

Operating Temperature :

-55°C~175°C TJ

Published :

2005

Input Capacitance (Ciss) (Max) @ Vds :

5660pF @ 25V