IPB100N06S2L05ATMA2

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

Pbfree Code :

yes

Operating Temperature :

-55°C~175°C TJ

FET Type :

N-Channel

Rds On (Max) @ Id, Vgs :

4.4m Ω @ 80A, 10V

Avalanche Energy Rating (Eas) :

810 mJ

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Power Dissipation :

300W

Halogen Free :

Halogen Free

Max Dual Supply Voltage :

55V

Mounting Type :

Surface Mount

RoHS Status :

ROHS3 Compliant

Number of Terminations :

2

Factory Lead Time :

10 Weeks

Power Dissipation-Max :

300W Tc

Vgs(th) (Max) @ Id :

2V @ 250μA

Vgs (Max) :

±20V

Mount :

Surface Mount

Pulsed Drain Current-Max (IDM) :

400A

Turn-Off Delay Time :

98 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Pins :

3

Current - Continuous Drain (Id) @ 25°C :

100A Tc

JESD-30 Code :

R-PSSO-G2

Drain to Source Breakdown Voltage :

55V

Packaging :

Tape and Reel (TR)

Operating Mode :

ENHANCEMENT MODE

Continuous Drain Current (ID) :

100A

Fall Time (Typ) :

24 ns

Turn On Delay Time :

18 ns

Additional Feature :

LOGIC LEVEL COMPATIBLE

Terminal Form :

Gull wing

Drain-source On Resistance-Max :

0.0056Ohm

Element Configuration :

Single

Gate Charge (Qg) (Max) @ Vgs :

230nC @ 10V

Series :

OptiMOS™

Gate to Source Voltage (Vgs) :

20V

Width :

9.45mm

Input Capacitance (Ciss) (Max) @ Vds :

5660pF @ 25V

Transistor Element Material :

SILICON

Case Connection :

DRAIN

Reach Compliance Code :

not_compliant

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Rise Time :

25ns

Published :

2005

Length :

10.31mm

Height :

4.57mm