IPB100N06S3L-04

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

-55°C~175°C TJ

Lead Free :

Lead Free

Terminal Form :

Gull wing

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Gate Charge (Qg) (Max) @ Vgs :

362nC @ 10V

Additional Feature :

LOGIC LEVEL COMPATIBLE

Vgs (Max) :

±16V

Element Configuration :

Single

Avalanche Energy Rating (Eas) :

450 mJ

Peak Reflow Temperature (Cel) :

260

Rise Time :

58ns

Power Dissipation :

214W

Drain-source On Resistance-Max :

0.0059Ohm

Time@Peak Reflow Temperature-Max (s) :

40

RoHS Status :

RoHS Compliant

Published :

2007

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Pin Count :

4

Mounting Type :

Surface Mount

Gate to Source Voltage (Vgs) :

16V

Continuous Drain Current (ID) :

100A

Turn-Off Delay Time :

82 ns

Operating Mode :

ENHANCEMENT MODE

FET Type :

N-Channel

Current - Continuous Drain (Id) @ 25°C :

100A Tc

JESD-609 Code :

e3

Input Capacitance (Ciss) (Max) @ Vds :

17270pF @ 25V

Drain to Source Breakdown Voltage :

55V

Power Dissipation-Max :

214W Tc

Voltage - Rated DC :

55V

Mount :

Surface Mount

Case Connection :

DRAIN

ECCN Code :

EAR99

Rds On (Max) @ Id, Vgs :

3.5m Ω @ 80A, 10V

Pulsed Drain Current-Max (IDM) :

400A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

2.2V @ 150µA

Fall Time (Typ) :

55 ns

Current Rating :

100A

Qualification Status :

Not Qualified

Packaging :

Tape and Reel (TR)

Series :

OptiMOS™

Number of Elements :

1

Transistor Element Material :

SILICON

Number of Terminations :

2

Terminal Finish :

MATTE TIN

JESD-30 Code :

R-PSSO-G2