IPB100N04S204ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Drain-source On Resistance-Max :

0.0033Ohm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~175°C TJ

RoHS Status :

ROHS3 Compliant

Input Capacitance (Ciss) (Max) @ Vds :

5300pF @ 25V

Number of Terminations :

2

Terminal Position :

Single

Published :

2006

Mounting Type :

Surface Mount

Power Dissipation-Max :

300W Tc

Additional Feature :

AVALANCHE RATED

Pulsed Drain Current-Max (IDM) :

400A

Rds On (Max) @ Id, Vgs :

3.3m Ω @ 80A, 10V

FET Type :

N-Channel

Vgs (Max) :

±20V

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain Current-Max (Abs) (ID) :

100A

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Drive Voltage (Max Rds On,Min Rds On) :

10V

Current - Continuous Drain (Id) @ 25°C :

100A Tc

ECCN Code :

EAR99

Transistor Element Material :

SILICON

DS Breakdown Voltage-Min :

40V

Drain to Source Voltage (Vdss) :

40V

Packaging :

Tape and Reel (TR)

Vgs(th) (Max) @ Id :

4V @ 250µA

JESD-30 Code :

R-PSSO-G2

Series :

OptiMOS™

Terminal Form :

Gull wing

Surface Mount :

yes

Case Connection :

DRAIN

Avalanche Energy Rating (Eas) :

810 mJ

Operating Mode :

ENHANCEMENT MODE

Gate Charge (Qg) (Max) @ Vgs :

172nC @ 10V

Number of Elements :

1