IPB100N06S2L05ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Voltage (Vdss) :

55V

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE

Terminal Position :

Single

DS Breakdown Voltage-Min :

55V

Number of Terminations :

2

Gate Charge (Qg) (Max) @ Vgs :

230nC @ 10V

Drain Current-Max (Abs) (ID) :

100A

Series :

OptiMOS™

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

100A Tc

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Operating Temperature :

-55°C~175°C TJ

Pulsed Drain Current-Max (IDM) :

400A

Drain-source On Resistance-Max :

0.0056Ohm

Case Connection :

DRAIN

Rds On (Max) @ Id, Vgs :

4.4m Ω @ 80A, 10V

Avalanche Energy Rating (Eas) :

810 mJ

Input Capacitance (Ciss) (Max) @ Vds :

5660pF @ 25V

Vgs (Max) :

±20V

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Form :

Gull wing

Power Dissipation-Max :

300W Tc

FET Type :

N-Channel

Number of Elements :

1

Vgs(th) (Max) @ Id :

2V @ 250μA

Additional Feature :

LOGIC LEVEL COMPATIBLE

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Published :

2005

ECCN Code :

EAR99

JESD-30 Code :

R-PSSO-G2

Packaging :

Tape and Reel (TR)

RoHS Status :

ROHS3 Compliant

Surface Mount :

yes