IPB100N06S205ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Mounting Type :

Surface Mount

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

4.7m Ω @ 80A, 10V

FET Type :

N-Channel

Published :

2006

Series :

OptiMOS™

Drain Current-Max (Abs) (ID) :

100A

Drain to Source Voltage (Vdss) :

55V

Number of Terminations :

2

Number of Elements :

1

DS Breakdown Voltage-Min :

55V

Terminal Form :

Gull wing

Operating Temperature :

-55°C~175°C TJ

Current - Continuous Drain (Id) @ 25°C :

100A Tc

Drain-source On Resistance-Max :

0.0047Ohm

Pulsed Drain Current-Max (IDM) :

400A

Gate Charge (Qg) (Max) @ Vgs :

170nC @ 10V

Terminal Position :

Single

Surface Mount :

yes

Case Connection :

DRAIN

Drive Voltage (Max Rds On,Min Rds On) :

10V

Avalanche Energy Rating (Eas) :

810 mJ

Packaging :

Tape and Reel (TR)

JESD-30 Code :

R-PSSO-G2

Power Dissipation-Max :

300W Tc

RoHS Status :

ROHS3 Compliant

Vgs(th) (Max) @ Id :

4V @ 250µA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Mode :

ENHANCEMENT MODE

Configuration :

SINGLE WITH BUILT-IN DIODE

Input Capacitance (Ciss) (Max) @ Vds :

5110pF @ 25V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Vgs (Max) :

±20V

ECCN Code :

EAR99