IPB100N04S2-04

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±20V

Input Capacitance (Ciss) (Max) @ Vds :

5300pF @ 25V

Gate to Source Voltage (Vgs) :

20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn On Delay Time :

27 ns

Packaging :

Tape and Reel (TR)

Series :

OptiMOS™

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Elements :

1

Power Dissipation :

300W

Gate Charge (Qg) (Max) @ Vgs :

172nC @ 10V

Transistor Element Material :

SILICON

Power Dissipation-Max :

300W Tc

Mounting Type :

Surface Mount

Pbfree Code :

yes

Number of Pins :

3

Current - Continuous Drain (Id) @ 25°C :

100A Tc

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Case Connection :

DRAIN

Vgs(th) (Max) @ Id :

4V @ 250µA

Max Dual Supply Voltage :

40V

JESD-30 Code :

R-PSSO-G2

Published :

2006

Drain to Source Breakdown Voltage :

40V

Fall Time (Typ) :

33 ns

FET Type :

N-Channel

Element Configuration :

Single

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Continuous Drain Current (ID) :

100A

Terminal Form :

Gull wing

Halogen Free :

Halogen Free

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Pulsed Drain Current-Max (IDM) :

400A

Number of Terminations :

2

Rds On (Max) @ Id, Vgs :

3.3m Ω @ 80A, 10V

Rise Time :

46ns

Avalanche Energy Rating (Eas) :

810 mJ

Factory Lead Time :

10 Weeks

Operating Mode :

ENHANCEMENT MODE

Turn-Off Delay Time :

56 ns

Operating Temperature :

-55°C~175°C TJ

Reach Compliance Code :

not_compliant

RoHS Status :

ROHS3 Compliant

Mount :

Surface Mount

Additional Feature :

AVALANCHE RATED

Lead Free :

Contains Lead