IPB100N04S2-04

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Mfr.Part #
IPB100N04S2-04
Manufacturer
Infineon Technologies
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Datasheet
Download
Description
IPB100N04 - 20V-40V N-CHANNEL AU
Stock
499
In Stock :
499

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - FETs, MOSFETs - Single
Element Configuration :
Single
Operating Temperature :
-55°C~175°C TJ
Terminal Form :
Gull wing
Number of Elements :
1
Avalanche Energy Rating (Eas) :
810 mJ
Number of Pins :
3
Reach Compliance Code :
not_compliant
Halogen Free :
Halogen Free
Gate to Source Voltage (Vgs) :
20V
Rds On (Max) @ Id, Vgs :
3.3m Ω @ 80A, 10V
Input Capacitance (Ciss) (Max) @ Vds :
5300pF @ 25V
JESD-30 Code :
R-PSSO-G2
Vgs (Max) :
±20V
Lead Free :
Contains Lead
Rise Time :
46ns
Gate Charge (Qg) (Max) @ Vgs :
172nC @ 10V
Max Dual Supply Voltage :
40V
Continuous Drain Current (ID) :
100A
Number of Terminations :
2
Additional Feature :
AVALANCHE RATED
Series :
OptiMOS™
Turn-Off Delay Time :
56 ns
Pbfree Code :
yes
Vgs(th) (Max) @ Id :
4V @ 250µA
Turn On Delay Time :
27 ns
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Pulsed Drain Current-Max (IDM) :
400A
Power Dissipation :
300W
Power Dissipation-Max :
300W Tc
Operating Mode :
ENHANCEMENT MODE
Drive Voltage (Max Rds On,Min Rds On) :
10V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Package / Case :
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Mount :
Surface Mount
Fall Time (Typ) :
33 ns
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Drain to Source Breakdown Voltage :
40V
Current - Continuous Drain (Id) @ 25°C :
100A Tc
RoHS Status :
ROHS3 Compliant
Transistor Element Material :
SILICON
Published :
2006
FET Type :
N-Channel
Packaging :
Tape and Reel (TR)
Mounting Type :
Surface Mount
Case Connection :
DRAIN
Factory Lead Time :
10 Weeks
Datasheets
IPB100N04S2-04
Introducing Transistors - FETs, MOSFETs - Single Infineon Technologies IPB100N04S2-04 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~175°C TJ, Number of Pins:3, Number of Terminations:2, Package / Case:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, Mounting Type:Surface Mount, IPB100N04S2-04 pinout, IPB100N04S2-04 datasheet PDF, IPB100N04S2-04 amp .Beyond Transistors - FETs, MOSFETs - Single Infineon Technologies IPB100N04S2-04 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies IPB100N04S2-04


N-Channel Tape & Reel (TR) 3.3m Ω @ 80A, 10V ±20V 5300pF @ 25V 172nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IPB100N04S204ATMA4 Overview


This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 810 mJ.The maximum input capacitance of this device is 5300pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 100A.When VGS=40V, and ID flows to VDS at 40VVDS, the drain-source breakdown voltage is 40V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 56 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 400A.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 27 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.With its 40V power supply, it is capable of handling a dual voltage maximum.Using drive voltage (10V), this device helps reduce its power consumption.

IPB100N04S204ATMA4 Features


the avalanche energy rating (Eas) is 810 mJ
a continuous drain current (ID) of 100A
a drain-to-source breakdown voltage of 40V voltage
the turn-off delay time is 56 ns
based on its rated peak drain current 400A.


IPB100N04S204ATMA4 Applications


There are a lot of Infineon Technologies
IPB100N04S204ATMA4 applications of single MOSFETs transistors.


  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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