IPB100N04S2L03ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

100A Tc

Number of Elements :

1

Input Capacitance (Ciss) (Max) @ Vds :

6000pF @ 25V

Rds On (Max) @ Id, Vgs :

3m Ω @ 80A, 10V

Pulsed Drain Current-Max (IDM) :

400A

Transistor Element Material :

SILICON

Drain-source On Resistance-Max :

0.003Ohm

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Case Connection :

DRAIN

Operating Temperature :

-55°C~175°C TJ

Mounting Type :

Surface Mount

Number of Terminations :

2

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Additional Feature :

AVALANCHE RATED

Drain to Source Voltage (Vdss) :

40V

JESD-30 Code :

R-PSSO-G2

ECCN Code :

EAR99

Configuration :

SINGLE WITH BUILT-IN DIODE

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Drain Current-Max (Abs) (ID) :

100A

Terminal Position :

Single

Published :

2006

FET Type :

N-Channel

Operating Mode :

ENHANCEMENT MODE

Gate Charge (Qg) (Max) @ Vgs :

230nC @ 10V

Avalanche Energy Rating (Eas) :

810 mJ

Terminal Form :

Gull wing

Series :

OptiMOS™

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

2V @ 250μA

Surface Mount :

yes

DS Breakdown Voltage-Min :

40V

RoHS Status :

ROHS3 Compliant

Packaging :

Tape and Reel (TR)

Power Dissipation-Max :

300W Tc