IPB100N04S303ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±20V

Current - Continuous Drain (Id) @ 25°C :

100A Tc

Factory Lead Time :

12 Weeks

Published :

2007

ECCN Code :

EAR99

FET Type :

N-Channel

Surface Mount :

yes

Series :

OptiMOS™

Mounting Type :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation-Max :

214W Tc

Case Connection :

DRAIN

Avalanche Energy Rating (Eas) :

898 mJ

Terminal Form :

Gull wing

Drive Voltage (Max Rds On,Min Rds On) :

10V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Terminal Finish :

Tin (Sn)

Reach Compliance Code :

not_compliant

Drain Current-Max (Abs) (ID) :

100A

DS Breakdown Voltage-Min :

40V

Pulsed Drain Current-Max (IDM) :

400A

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Operating Temperature :

-55°C~175°C TJ

Operating Mode :

ENHANCEMENT MODE

Drain-source On Resistance-Max :

0.0028Ohm

RoHS Status :

ROHS3 Compliant

JESD-30 Code :

R-PSSO-G2

Drain to Source Voltage (Vdss) :

40V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Terminations :

2

Rds On (Max) @ Id, Vgs :

2.5m Ω @ 80A, 10V

Gate Charge (Qg) (Max) @ Vgs :

145nC @ 10V

Transistor Element Material :

SILICON

JESD-609 Code :

e3

Number of Elements :

1

Additional Feature :

ULTRA LOW RESISTANCE

Packaging :

Tape and Reel (TR)

Terminal Position :

Single

Configuration :

SINGLE WITH BUILT-IN DIODE

HTS Code :

8541.29.00.95

Input Capacitance (Ciss) (Max) @ Vds :

9600pF @ 25V

Vgs(th) (Max) @ Id :

4V @ 150μA