IPB100N06S3L-03

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

100A Tc

Turn-Off Delay Time :

110 ns

Transistor Element Material :

SILICON

Rise Time :

70ns

Avalanche Energy Rating (Eas) :

690 mJ

Published :

2004

Element Configuration :

Single

Gate Charge (Qg) (Max) @ Vgs :

550nC @ 10V

Drain-source On Resistance-Max :

0.0043Ohm

Operating Mode :

ENHANCEMENT MODE

Mount :

Surface Mount

Terminal Finish :

MATTE TIN

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Number of Terminations :

2

FET Type :

N-Channel

Power Dissipation :

300W

Operating Temperature :

-55°C~175°C TJ

Vgs (Max) :

±16V

Input Capacitance (Ciss) (Max) @ Vds :

26240pF @ 25V

Packaging :

Tape and Reel (TR)

Qualification Status :

Not Qualified

Continuous Drain Current (ID) :

100A

Number of Elements :

1

Current Rating :

100A

JESD-609 Code :

e3

Terminal Form :

Gull wing

Rds On (Max) @ Id, Vgs :

2.7m Ω @ 80A, 10V

Series :

OptiMOS™

Power Dissipation-Max :

300W Tc

Case Connection :

DRAIN

JESD-30 Code :

R-PSSO-G2

Peak Reflow Temperature (Cel) :

260

Pulsed Drain Current-Max (IDM) :

400A

Vgs(th) (Max) @ Id :

2.2V @ 230μA

Pin Count :

4

Voltage - Rated DC :

55V

Additional Feature :

LOGIC LEVEL COMPATIBLE

ECCN Code :

EAR99

Mounting Type :

Surface Mount

Drain to Source Breakdown Voltage :

55V

Transistor Application :

SWITCHING

Time@Peak Reflow Temperature-Max (s) :

40

RoHS Status :

RoHS Compliant

Gate to Source Voltage (Vgs) :

16V

Fall Time (Typ) :

77 ns

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Lead Free :

Lead Free