IPB100N06S3L-03

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

550nC @ 10V

Additional Feature :

LOGIC LEVEL COMPATIBLE

Fall Time (Typ) :

77 ns

Element Configuration :

Single

Case Connection :

DRAIN

Peak Reflow Temperature (Cel) :

260

Number of Terminations :

2

Published :

2004

Qualification Status :

Not Qualified

Drain to Source Breakdown Voltage :

55V

Mount :

Surface Mount

Mounting Type :

Surface Mount

Current Rating :

100A

Power Dissipation-Max :

300W Tc

Rise Time :

70ns

Drain-source On Resistance-Max :

0.0043Ohm

Series :

OptiMOS™

Rds On (Max) @ Id, Vgs :

2.7m Ω @ 80A, 10V

Avalanche Energy Rating (Eas) :

690 mJ

Pin Count :

4

Voltage - Rated DC :

55V

Power Dissipation :

300W

Number of Elements :

1

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

-55°C~175°C TJ

Terminal Finish :

MATTE TIN

Input Capacitance (Ciss) (Max) @ Vds :

26240pF @ 25V

RoHS Status :

RoHS Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-30 Code :

R-PSSO-G2

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

100A Tc

Packaging :

Tape and Reel (TR)

Vgs (Max) :

±16V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Vgs(th) (Max) @ Id :

2.2V @ 230μA

Gate to Source Voltage (Vgs) :

16V

Transistor Application :

SWITCHING

JESD-609 Code :

e3

Continuous Drain Current (ID) :

100A

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Turn-Off Delay Time :

110 ns

Pulsed Drain Current-Max (IDM) :

400A

Time@Peak Reflow Temperature-Max (s) :

40

ECCN Code :

EAR99

Terminal Form :

Gull wing

Lead Free :

Lead Free

FET Type :

N-Channel