IPB100N04S2L03ATMA2

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Breakdown Voltage :

40V

Vgs (Max) :

±20V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Mount :

Surface Mount

Lead Free :

Contains Lead

Terminal Form :

Gull wing

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Vgs(th) (Max) @ Id :

2V @ 250μA

Additional Feature :

AVALANCHE RATED

Gate to Source Voltage (Vgs) :

20V

Fall Time (Typ) :

27 ns

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Packaging :

Tape and Reel (TR)

Transistor Element Material :

SILICON

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Avalanche Energy Rating (Eas) :

810 mJ

Element Configuration :

Single

Power Dissipation-Max :

300W Tc

Series :

OptiMOS™

Published :

2006

Turn-Off Delay Time :

77 ns

Turn On Delay Time :

19 ns

Max Dual Supply Voltage :

40V

Operating Temperature :

-55°C~175°C TJ

Pulsed Drain Current-Max (IDM) :

400A

ECCN Code :

EAR99

Case Connection :

DRAIN

Gate Charge (Qg) (Max) @ Vgs :

230nC @ 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation :

300W

Rds On (Max) @ Id, Vgs :

3m Ω @ 80A, 10V

Halogen Free :

Halogen Free

Input Capacitance (Ciss) (Max) @ Vds :

6000pF @ 25V

Continuous Drain Current (ID) :

100A

Operating Mode :

ENHANCEMENT MODE

FET Type :

N-Channel

Mounting Type :

Surface Mount

Number of Pins :

3

Rise Time :

51ns

Pbfree Code :

yes

Number of Elements :

1

JESD-30 Code :

R-PSSO-G2

RoHS Status :

ROHS3 Compliant

Factory Lead Time :

31 Weeks

Current - Continuous Drain (Id) @ 25°C :

100A Tc

Number of Terminations :

2