IPB100N06S3-04

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Avalanche Energy Rating (Eas) :

450 mJ

Peak Reflow Temperature (Cel) :

260

Input Capacitance (Ciss) (Max) @ Vds :

14230pF @ 25V

RoHS Status :

RoHS Compliant

Operating Mode :

ENHANCEMENT MODE

Time@Peak Reflow Temperature-Max (s) :

40

Qualification Status :

Not Qualified

Published :

2007

Pin Count :

4

Vgs (Max) :

±20V

JESD-30 Code :

R-PSSO-G2

Gate to Source Voltage (Vgs) :

20V

ECCN Code :

EAR99

Terminal Finish :

MATTE TIN

Rds On (Max) @ Id, Vgs :

4.1m Ω @ 80A, 10V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

FET Type :

N-Channel

Element Configuration :

Single

Current - Continuous Drain (Id) @ 25°C :

100A Tc

Power Dissipation-Max :

214W Tc

Current Rating :

100A

Fall Time (Typ) :

62 ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Terminal Form :

Gull wing

JESD-609 Code :

e3

Mount :

Surface Mount

Power Dissipation :

214W

Vgs(th) (Max) @ Id :

4V @ 150μA

Number of Elements :

1

Number of Terminations :

2

Transistor Element Material :

SILICON

Series :

OptiMOS™

Operating Temperature :

-55°C~175°C TJ

Gate Charge (Qg) (Max) @ Vgs :

314nC @ 10V

Lead Free :

Lead Free

Mounting Type :

Surface Mount

Continuous Drain Current (ID) :

100A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn-Off Delay Time :

62 ns

Pulsed Drain Current-Max (IDM) :

400A

Drain to Source Breakdown Voltage :

55V

Case Connection :

DRAIN

Rise Time :

62ns

Packaging :

Tape and Reel (TR)

Voltage - Rated DC :

55V