IPB100N04S4H2ATMA1
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- Mfr.Part #
- IPB100N04S4H2ATMA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 40V 100A TO263-3
- Stock
- 26,804
- In Stock ：
- 26,804
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- ECCN Code :
- EAR99
- Terminal Position :
- Single
- Halogen Free :
- Halogen Free
- Mounting Type :
- Surface Mount
- Drain-source On Resistance-Max :
- 0.0024Ohm
- Max Dual Supply Voltage :
- 40V
- Number of Terminations :
- 2
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Packaging :
- Tape and Reel (TR)
- Factory Lead Time :
- 16 Weeks
- Current - Continuous Drain (Id) @ 25°C :
- 100A Tc
- FET Type :
- N-Channel
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Vgs (Max) :
- ±20V
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Transistor Element Material :
- SILICON
- Terminal Form :
- Gull wing
- Series :
- OptiMOS™
- Number of Elements :
- 1
- Turn-Off Delay Time :
- 19 ns
- Vgs(th) (Max) @ Id :
- 4V @ 70μA
- Fall Time (Typ) :
- 21 ns
- Operating Mode :
- ENHANCEMENT MODE
- Operating Temperature :
- -55°C~175°C TJ
- Power Dissipation-Max :
- 115W Tc
- Avalanche Energy Rating (Eas) :
- 280 mJ
- Turn On Delay Time :
- 18 ns
- Mount :
- Surface Mount
- Rds On (Max) @ Id, Vgs :
- 2.4m Ω @ 100A, 10V
- Gate Charge (Qg) (Max) @ Vgs :
- 90nC @ 10V
- Number of Pins :
- 3
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Rise Time :
- 13ns
- RoHS Status :
- ROHS3 Compliant
- Lead Free :
- Contains Lead
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gate to Source Voltage (Vgs) :
- 20V
- Input Capacitance (Ciss) (Max) @ Vds :
- 7180pF @ 25V
- Continuous Drain Current (ID) :
- 100A
- JESD-30 Code :
- R-PSSO-G2
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Pulsed Drain Current-Max (IDM) :
- 400A
- Published :
- 2012
- Datasheets
- IPB100N04S4H2ATMA1
N-Channel Tape & Reel (TR) 2.4m Ω @ 100A, 10V ±20V 7180pF @ 25V 90nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IPB100N04S4H2ATMA1 Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 280 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 7180pF @ 25V.This device conducts a continuous drain current (ID) of 100A, which is the maximum continuous current transistor can conduct.When the device is turned off, a turn-off delay time of 19 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 400A.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 18 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.With 40V power, it supports a dual voltage supply of up to maximum.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
IPB100N04S4H2ATMA1 Features
the avalanche energy rating (Eas) is 280 mJ
a continuous drain current (ID) of 100A
the turn-off delay time is 19 ns
based on its rated peak drain current 400A.
IPB100N04S4H2ATMA1 Applications
There are a lot of Infineon Technologies
IPB100N04S4H2ATMA1 applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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