IPB180P04P4L02ATMA2

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Mounting Style :

SMD/SMT

Base Product Number :

IPB180

Product Type :

MOSFET

Package Type :

D2PAK-7

Power Dissipation :

150W

Rds On (Max) @ Id, Vgs :

2.4mOhm @ 100A, 10V

Input Capacitance (Ciss) (Max) @ Vds :

18700 pF @ 25 V

Series :

OptiMOS?-P2

Vgs(th) (Max) @ Id :

2.2V @ 410μA

Transistor Type :

1 P-Channel

Number of Channels :

1 Channel

Gate Charge (Qg) (Max) @ Vgs :

286 nC @ 10 V

Channel Type :

P

Packaging :

MouseReel

Subcategory :

MOSFETs

Current - Continuous Drain (Id) @ 25°C :

180A (Tc)

Package :

Digi-Reel?

Mounting Type :

Surface Mount

Pin Count :

7

Minimum Operating Temperature :

- 55 C

Drain to Source Voltage (Vdss) :

40 V

Transistor Polarity :

P-Channel

Power Dissipation (Max) :

150W (Tc)

RoHS :

Details

Rise Time :

28 ns

Operating Temperature :

-55°C ~ 175°C (TJ)

Continuous Drain Current Id :

180A

Brand :

Infineon Technologies

FET Feature :

-

Maximum Operating Temperature :

+ 175 C

Drive Voltage (Max Rds On, Min Rds On) :

4.5V, 10V

Product Category :

MOSFET

Supplier Device Package :

PG-TO263-7-3

Channel Mode :

Enhancement

Product Status :

Active

Number of Elements per Chip :

1

Manufacturer :

Infineon

Vgs (Max) :

+5V, -16V

Qualification :

AEC-Q101

FET Type :

P-Channel