IPB180P04P403ATMA1

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Mfr.Part #
IPB180P04P403ATMA1
Manufacturer
Infineon Technologies
Package / Case
Datasheet
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Description
MOSFET P-CH 40V 180A TO263-7
Stock
22,545
In Stock :
22,545

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - FETs, MOSFETs - Single
Terminal Form :
Gull wing
Series :
Automotive, AEC-Q101, OptiMOS™
Power Dissipation-Max :
150W Tc
Avalanche Energy Rating (Eas) :
90 mJ
Number of Terminations :
6
Gate to Source Voltage (Vgs) :
20V
RoHS Status :
ROHS3 Compliant
Terminal Finish :
Tin (Sn)
JESD-609 Code :
e3
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Rds On (Max) @ Id, Vgs :
2.8m Ω @ 100A, 10V
JESD-30 Code :
R-PSSO-G6
Mount :
Surface Mount
Halogen Free :
Halogen Free
Drain-source On Resistance-Max :
0.0028Ohm
Current - Continuous Drain (Id) @ 25°C :
180A Tc
Mounting Type :
Surface Mount
Max Dual Supply Voltage :
-40V
Gate Charge (Qg) (Max) @ Vgs :
250nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
17640pF @ 25V
Turn-Off Delay Time :
72 ns
Reach Compliance Code :
not_compliant
Vgs(th) (Max) @ Id :
4V @ 410μA
ECCN Code :
EAR99
Height :
4.4mm
Element Configuration :
Single
Drain to Source Breakdown Voltage :
-40V
Number of Pins :
7
Number of Elements :
1
Drive Voltage (Max Rds On,Min Rds On) :
10V
Operating Mode :
ENHANCEMENT MODE
Transistor Element Material :
SILICON
Width :
9.25mm
Fall Time (Typ) :
81 ns
Vgs (Max) :
±20V
Rise Time :
31ns
Power Dissipation :
150W
Continuous Drain Current (ID) :
180A
Factory Lead Time :
14 Weeks
Case Connection :
DRAIN
Lead Free :
Contains Lead
Drain to Source Voltage (Vdss) :
40V
Turn On Delay Time :
48 ns
Length :
10mm
Packaging :
Tape and Reel (TR)
Published :
2002
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
FET Type :
P-Channel
Operating Temperature :
-55°C~175°C TJ
Introducing Transistors - FETs, MOSFETs - Single Infineon Technologies IPB180P04P403ATMA1 from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:6, Mounting Type:Surface Mount, Number of Pins:7, Operating Temperature:-55°C~175°C TJ, IPB180P04P403ATMA1 pinout, IPB180P04P403ATMA1 datasheet PDF, IPB180P04P403ATMA1 amp .Beyond Transistors - FETs, MOSFETs - Single Infineon Technologies IPB180P04P403ATMA1 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies IPB180P04P403ATMA1


P-Channel Tape & Reel (TR) 2.8m Ω @ 100A, 10V ±20V 17640pF @ 25V 250nC @ 10V 40V TO-263-7, D2Pak (6 Leads + Tab)

IPB180P04P403ATMA1 Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 90 mJ.A device's maximum input capacitance is 17640pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 180A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=-40V, and this device has a drain-to-source breakdown voltage of -40V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 72 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 48 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.Powered by -40V, it supports maximum dual supply voltages.To operate this transistor, you need to apply a 40V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.

IPB180P04P403ATMA1 Features


the avalanche energy rating (Eas) is 90 mJ
a continuous drain current (ID) of 180A
a drain-to-source breakdown voltage of -40V voltage
the turn-off delay time is 72 ns
a 40V drain to source voltage (Vdss)


IPB180P04P403ATMA1 Applications


There are a lot of Infineon Technologies
IPB180P04P403ATMA1 applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters
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