IPB180N10S403ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Mount :

Surface Mount

Number of Elements :

1

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

FET Type :

N-Channel

Configuration :

SINGLE WITH BUILT-IN DIODE

Rds On (Max) @ Id, Vgs :

3.3m Ω @ 100A, 10V

Transistor Element Material :

SILICON

Series :

Automotive, AEC-Q101, OptiMOS™

ECCN Code :

EAR99

Case Connection :

DRAIN

Terminal Form :

Gull wing

Vgs (Max) :

±20V

Mounting Type :

Surface Mount

Pulsed Drain Current-Max (IDM) :

720A

JESD-609 Code :

e3

Power Dissipation-Max :

250W Tc

Drain-source On Resistance-Max :

0.0033Ohm

Vgs(th) (Max) @ Id :

3.5V @ 180μA

Max Dual Supply Voltage :

100V

Lead Free :

Contains Lead

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Current - Continuous Drain (Id) @ 25°C :

180A Tc

Drive Voltage (Max Rds On,Min Rds On) :

10V

JESD-30 Code :

R-PSSO-G6

RoHS Status :

ROHS3 Compliant

Packaging :

Tape and Reel (TR)

Avalanche Energy Rating (Eas) :

530 mJ

Terminal Finish :

Tin (Sn)

Operating Mode :

ENHANCEMENT MODE

Halogen Free :

Halogen Free

Terminal Position :

Single

Continuous Drain Current (ID) :

180A

Factory Lead Time :

14 Weeks

Published :

2013

Operating Temperature :

-55°C~175°C TJ

Number of Terminations :

6

Gate Charge (Qg) (Max) @ Vgs :

140nC @ 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

10120pF @ 25V

Reach Compliance Code :

not_compliant