IPB180N08S402ATMA1
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- Mfr.Part #
- IPB180N08S402ATMA1
- Manufacturer
- Infineon Technologies
- Package / Case
- Datasheet
- Download
- Description
- MOSFET N-CH 80V 180A TO263-7
- Stock
- 2,113
- In Stock ：
- 2,113
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Case Connection :
- DRAIN
- Continuous Drain Current (ID) :
- 180A
- Number of Terminations :
- 6
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Max Dual Supply Voltage :
- 80V
- Input Capacitance (Ciss) (Max) @ Vds :
- 11550pF @ 25V
- Halogen Free :
- Halogen Free
- Avalanche Energy Rating (Eas) :
- 640 mJ
- Terminal Position :
- Single
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Current - Continuous Drain (Id) @ 25°C :
- 180A Tc
- Published :
- 2013
- Gate Charge (Qg) (Max) @ Vgs :
- 167nC @ 10V
- Power Dissipation-Max :
- 277W Tc
- Series :
- Automotive, AEC-Q101, OptiMOS™
- Number of Pins :
- 7
- Mount :
- Surface Mount
- Terminal Form :
- Gull wing
- Turn-Off Delay Time :
- 50 ns
- Vgs(th) (Max) @ Id :
- 4V @ 220μA
- FET Type :
- N-Channel
- Rise Time :
- 15ns
- JESD-30 Code :
- R-PSSO-G6
- Operating Mode :
- ENHANCEMENT MODE
- Packaging :
- Tape and Reel (TR)
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Factory Lead Time :
- 14 Weeks
- Mounting Type :
- Surface Mount
- Gate to Source Voltage (Vgs) :
- 20V
- Lead Free :
- Contains Lead
- Number of Elements :
- 1
- Drain-source On Resistance-Max :
- 0.0022Ohm
- ECCN Code :
- EAR99
- RoHS Status :
- ROHS3 Compliant
- Vgs (Max) :
- ±20V
- Additional Feature :
- ULTRA LOW RESISTANCE
- Rds On (Max) @ Id, Vgs :
- 2.2m Ω @ 100A, 10V
- Transistor Element Material :
- SILICON
- Pbfree Code :
- yes
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Operating Temperature :
- -55°C~175°C TJ
- Turn On Delay Time :
- 30 ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- IPB180N08S402ATMA1
N-Channel Tape & Reel (TR) 2.2m Ω @ 100A, 10V ±20V 11550pF @ 25V 167nC @ 10V TO-263-7, D2Pak (6 Leads + Tab)
IPB180N08S402ATMA1 Overview
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 640 mJ.The maximum input capacitance of this device is 11550pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 180A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 50 ns.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 30 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.With its 80V power supply, it is capable of handling a dual voltage maximum.Using drive voltage (10V), this device helps reduce its power consumption.
IPB180N08S402ATMA1 Features
the avalanche energy rating (Eas) is 640 mJ
a continuous drain current (ID) of 180A
the turn-off delay time is 50 ns
IPB180N08S402ATMA1 Applications
There are a lot of Infineon Technologies
IPB180N08S402ATMA1 applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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