IPB180N06S4H1ATMA2

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

1.7m Ω @ 100A, 10V

RoHS Status :

ROHS3 Compliant

Series :

Automotive, AEC-Q101, OptiMOS™

Drive Voltage (Max Rds On,Min Rds On) :

10V

JESD-609 Code :

e3

Reach Compliance Code :

not_compliant

Packaging :

Tape and Reel (TR)

Case Connection :

DRAIN

Turn On Delay Time :

30 ns

Terminal Form :

Gull wing

Vgs (Max) :

±20V

Mount :

Surface Mount

Transistor Element Material :

SILICON

Element Configuration :

Single

Peak Reflow Temperature (Cel) :

260

JESD-30 Code :

R-PSSO-G6

Continuous Drain Current (ID) :

180A

Drain to Source Breakdown Voltage :

60V

Mounting Type :

Surface Mount

Gate to Source Voltage (Vgs) :

20V

ECCN Code :

EAR99

Number of Pins :

7

Current - Continuous Drain (Id) @ 25°C :

180A Tc

Weight :

1.59999g

Package / Case :

TO-263-7, D2Pak (6 Leads + Tab), TO-263CB

Turn-Off Delay Time :

60 ns

Vgs(th) (Max) @ Id :

4V @ 200μA

Input Capacitance (Ciss) (Max) @ Vds :

21900pF @ 25V

Terminal Finish :

Tin (Sn)

Published :

2009

FET Type :

N-Channel

Factory Lead Time :

16 Weeks

Fall Time (Typ) :

15 ns

Gate Charge (Qg) (Max) @ Vgs :

270nC @ 10V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Length :

10.31mm

Number of Terminations :

6

Operating Temperature :

-55°C~175°C TJ

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

250W Tc

Rise Time :

5ns

Height :

4.57mm

Width :

9.45mm

Max Dual Supply Voltage :

60V

Number of Channels :

1

Pbfree Code :

yes

Number of Elements :

1