IPB180N04S4L01ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Mount :

Surface Mount

Configuration :

SINGLE WITH BUILT-IN DIODE

Lead Free :

Contains Lead

Reach Compliance Code :

not_compliant

Halogen Free :

Halogen Free

Case Connection :

DRAIN

JESD-30 Code :

R-PSSO-G6

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Pbfree Code :

yes

Gate Charge (Qg) (Max) @ Vgs :

245nC @ 10V

Published :

2013

Rds On (Max) @ Id, Vgs :

1.2m Ω @ 100A, 10V

Vgs(th) (Max) @ Id :

2.2V @ 140μA

Operating Temperature :

-55°C~175°C TJ

Series :

Automotive, AEC-Q101, OptiMOS™

Current - Continuous Drain (Id) @ 25°C :

180A Tc

Number of Elements :

1

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Operating Mode :

ENHANCEMENT MODE

Vgs (Max) :

+20V, -16V

Terminal Position :

Single

RoHS Status :

ROHS3 Compliant

Continuous Drain Current (ID) :

180A

Pulsed Drain Current-Max (IDM) :

720A

Max Dual Supply Voltage :

40V

Number of Terminations :

6

Power Dissipation-Max :

188W Tc

Avalanche Energy Rating (Eas) :

550 mJ

Mounting Type :

Surface Mount

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Terminal Form :

Gull wing

Factory Lead Time :

14 Weeks

Input Capacitance (Ciss) (Max) @ Vds :

19100pF @ 25V

FET Type :

N-Channel

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain-source On Resistance-Max :

0.0012Ohm

Packaging :

Tape and Reel (TR)