IPB180N04S4H0ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

ROHS3 Compliant

Transistor Element Material :

SILICON

Published :

2010

Drive Voltage (Max Rds On,Min Rds On) :

10V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

JESD-30 Code :

R-PSSO-G6

Current - Continuous Drain (Id) @ 25°C :

180A Tc

Terminal Position :

Single

Avalanche Energy Rating (Eas) :

850 mJ

Input Capacitance (Ciss) (Max) @ Vds :

17940pF @ 25V

Terminal Form :

Gull wing

Number of Terminations :

6

Rds On (Max) @ Id, Vgs :

1.1m Ω @ 100A, 10V

Surface Mount :

yes

Gate Charge (Qg) (Max) @ Vgs :

225nC @ 10V

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

4V @ 180μA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

Drain to Source Voltage (Vdss) :

40V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Packaging :

Tape and Reel (TR)

Factory Lead Time :

16 Weeks

Operating Temperature :

-55°C~175°C TJ

Case Connection :

DRAIN

Configuration :

SINGLE WITH BUILT-IN DIODE

Series :

OptiMOS™

ECCN Code :

EAR99

Reach Compliance Code :

not_compliant

Pulsed Drain Current-Max (IDM) :

720A

JESD-609 Code :

e3

FET Type :

N-Channel

Drain-source On Resistance-Max :

0.0011Ohm

DS Breakdown Voltage-Min :

40V

Operating Mode :

ENHANCEMENT MODE

Terminal Finish :

Tin (Sn)

Reference Standard :

AEC-Q101

Power Dissipation-Max :

250W Tc

Mounting Type :

Surface Mount

Additional Feature :

ULTRA-LOW RESISTANCE

Drain Current-Max (Abs) (ID) :

180A