IPB180N03S4L-01
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- Mfr.Part #
- IPB180N03S4L-01
- Manufacturer
- Infineon Technologies
- Package / Case
- Datasheet
- Download
- Description
- IPB180N03 - 20V-40V N-CHANNEL AU
- Stock
- 8,326
- In Stock ：
- 8,326
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Rise Time :
- 5ns
- Terminal Finish :
- Tin (Sn)
- Published :
- 2009
- Mount :
- Surface Mount
- Turn-Off Delay Time :
- 57 ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Surface Mount
- Reach Compliance Code :
- not_compliant
- ECCN Code :
- EAR99
- Number of Pins :
- 7
- Gate Charge (Qg) (Max) @ Vgs :
- 239nC @ 10V
- Fall Time (Typ) :
- 23 ns
- Reference Standard :
- AEC-Q101
- Max Dual Supply Voltage :
- 30V
- Halogen Free :
- Halogen Free
- Packaging :
- Tape and Reel (TR)
- Avalanche Energy Rating (Eas) :
- 530 mJ
- Gate to Source Voltage (Vgs) :
- 16V
- Vgs(th) (Max) @ Id :
- 2.2V @ 140μA
- JESD-30 Code :
- R-PSSO-G6
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Drain-source On Resistance-Max :
- 0.00105Ohm
- Number of Elements :
- 1
- Current - Continuous Drain (Id) @ 25°C :
- 180A Tc
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Input Capacitance (Ciss) (Max) @ Vds :
- 17600pF @ 25V
- JESD-609 Code :
- e3
- Vgs (Max) :
- ±16V
- Rds On (Max) @ Id, Vgs :
- 1.05m Ω @ 100A, 10V
- Turn On Delay Time :
- 8 ns
- Operating Mode :
- ENHANCEMENT MODE
- RoHS Status :
- ROHS3 Compliant
- Operating Temperature :
- -55°C~175°C TJ
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Factory Lead Time :
- 14 Weeks
- Terminal Position :
- Single
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Number of Terminations :
- 6
- Terminal Form :
- Gull wing
- Continuous Drain Current (ID) :
- 180A
- Lead Free :
- Contains Lead
- Power Dissipation-Max :
- 188W Tc
- Series :
- OptiMOS™
- Additional Feature :
- ULTRA-LOW RESISTANCE
- Case Connection :
- DRAIN
- FET Type :
- N-Channel
- Transistor Element Material :
- SILICON
- Datasheets
- IPB180N03S4L-01
N-Channel Tape & Reel (TR) 1.05m Ω @ 100A, 10V ±16V 17600pF @ 25V 239nC @ 10V TO-263-7, D2Pak (6 Leads + Tab)
IPB180N03S4L01ATMA1 Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 530 mJ.A device's maximum input capacitance is 17600pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 180A for this device. Drain current refers to the capacity of the device to conduct continuous current.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 57 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 8 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 16V.Powered by 30V, it supports maximum dual supply voltages.This device uses no drive voltage (4.5V 10V) to reduce its overall power consumption.
IPB180N03S4L01ATMA1 Features
the avalanche energy rating (Eas) is 530 mJ
a continuous drain current (ID) of 180A
the turn-off delay time is 57 ns
IPB180N03S4L01ATMA1 Applications
There are a lot of Infineon Technologies
IPB180N03S4L01ATMA1 applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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