IPB16CN10N G

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

53A Tc

JESD-609 Code :

e3

Peak Reflow Temperature (Cel) :

260

JESD-30 Code :

R-PSSO-G2

Operating Temperature :

-55°C~175°C TJ

Qualification Status :

Not Qualified

Series :

OptiMOS™

Transistor Element Material :

SILICON

FET Type :

N-Channel

RoHS Status :

RoHS Compliant

Rds On (Max) @ Id, Vgs :

16.5m Ω @ 53A, 10V

Pin Count :

4

Packaging :

Tape and Reel (TR)

Drain Current-Max (Abs) (ID) :

53A

Transistor Application :

SWITCHING

Number of Terminations :

2

Case Connection :

DRAIN

Terminal Finish :

Matte Tin (Sn)

Mounting Type :

Surface Mount

Published :

2006

ECCN Code :

EAR99

Power Dissipation-Max :

100W Tc

Terminal Position :

Single

Vgs (Max) :

±20V

Reach Compliance Code :

Unknown

Avalanche Energy Rating (Eas) :

107 mJ

Drain-source On Resistance-Max :

0.0165ohm

Vgs(th) (Max) @ Id :

4V @ 61μA

Gate Charge (Qg) (Max) @ Vgs :

48nC @ 10V

Time@Peak Reflow Temperature-Max (s) :

40

Configuration :

SINGLE WITH BUILT-IN DIODE

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Number of Elements :

1

Surface Mount :

yes

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain to Source Voltage (Vdss) :

100V

Pulsed Drain Current-Max (IDM) :

212A

Terminal Form :

Gull wing

Input Capacitance (Ciss) (Max) @ Vds :

3220pF @ 50V

Operating Mode :

ENHANCEMENT MODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

DS Breakdown Voltage-Min :

100V