IPB160N08S403ATMA1
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- Mfr.Part #
- IPB160N08S403ATMA1
- Manufacturer
- Infineon Technologies
- Package / Case
- Datasheet
- Download
- Description
- MOSFET N-CH 80V 160A TO263-7
- Stock
- 15,501
- In Stock ：
- 15,501
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Published :
- 2013
- Mounting Type :
- Surface Mount
- Rds On (Max) @ Id, Vgs :
- 3.2mOhm @ 100A, 10V
- Min Operating Temperature :
- -55°C
- Input Capacitance :
- 7.75nF
- Max Dual Supply Voltage :
- 80V
- Max Operating Temperature :
- 175°C
- Gate to Source Voltage (Vgs) :
- 20V
- Rise Time :
- 11ns
- Current - Continuous Drain (Id) @ 25°C :
- 160A Tc
- Gate Charge (Qg) (Max) @ Vgs :
- 112nC @ 10V
- Drain to Source Voltage (Vdss) :
- 80V
- Vgs (Max) :
- ±20V
- Operating Temperature :
- -55°C~175°C TJ
- Factory Lead Time :
- 14 Weeks
- RoHS Status :
- ROHS3 Compliant
- Halogen Free :
- Halogen Free
- FET Type :
- N-Channel
- Vgs(th) (Max) @ Id :
- 4V @ 150μA
- Mount :
- Surface Mount
- Turn On Delay Time :
- 18 ns
- Rds On Max :
- 3.2 mΩ
- Continuous Drain Current (ID) :
- 160A
- Supplier Device Package :
- PG-TO263-7-3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lead Free :
- Contains Lead
- Number of Pins :
- 7
- Turn-Off Delay Time :
- 30 ns
- Series :
- Automotive, AEC-Q101, OptiMOS™
- Packaging :
- Tape and Reel (TR)
- Power Dissipation-Max :
- 208W Tc
- Fall Time (Typ) :
- 38 ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 7750pF @ 25V
- Datasheets
- IPB160N08S403ATMA1
N-Channel Tape & Reel (TR) 3.2mOhm @ 100A, 10V ±20V 7750pF @ 25V 112nC @ 10V 80V TO-263-7, D2Pak (6 Leads + Tab)
IPB160N08S403ATMA1 Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 7750pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.As a result of its turn-off delay time, which is 30 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 18 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The maximum dual supply voltage can be supported by 80V.The transistor must receive a 80V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).
IPB160N08S403ATMA1 Features
a continuous drain current (ID) of 160A
the turn-off delay time is 30 ns
a 80V drain to source voltage (Vdss)
IPB160N08S403ATMA1 Applications
There are a lot of Infineon Technologies
IPB160N08S403ATMA1 applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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