IPB160N04S4H1ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Element Material :

SILICON

Terminal Form :

Gull wing

Gate to Source Voltage (Vgs) :

20V

Number of Pins :

7

Operating Mode :

ENHANCEMENT MODE

Drain-source On Resistance-Max :

0.0016Ohm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Surface Mount

Max Dual Supply Voltage :

40V

Reference Standard :

AEC-Q101

Packaging :

Cut Tape (CT)

Rds On (Max) @ Id, Vgs :

1.6m Ω @ 100A, 10V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Rise Time :

22ns

Vgs (Max) :

±20V

Terminal Position :

Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs(th) (Max) @ Id :

4V @ 110μA

Gate Charge (Qg) (Max) @ Vgs :

137nC @ 10V

RoHS Status :

ROHS3 Compliant

Mounting Type :

Surface Mount

Series :

OptiMOS™

Turn-Off Delay Time :

29 ns

Number of Terminations :

6

JESD-30 Code :

R-PSSO-G6

Power Dissipation-Max :

167W Tc

Turn On Delay Time :

28 ns

ECCN Code :

EAR99

Additional Feature :

ULTRA LOW RESISTANCE

Configuration :

SINGLE WITH BUILT-IN DIODE

Avalanche Energy Rating (Eas) :

400 mJ

Operating Temperature :

-55°C~175°C TJ

Factory Lead Time :

16 Weeks

Published :

2012

Pulsed Drain Current-Max (IDM) :

640A

Number of Elements :

1

Halogen Free :

Halogen Free

Current - Continuous Drain (Id) @ 25°C :

160A Tc

Fall Time (Typ) :

33 ns

FET Type :

N-Channel

Continuous Drain Current (ID) :

160A

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Case Connection :

DRAIN

Input Capacitance (Ciss) (Max) @ Vds :

10920pF @ 25V

Lead Free :

Contains Lead