IPB160N04S3H2ATMA1
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- Mfr.Part #
- IPB160N04S3H2ATMA1
- Manufacturer
- Infineon Technologies
- Package / Case
- Datasheet
- Download
- Description
- MOSFET N-CH 40V 160A TO263-7
- Stock
- 77,857
- In Stock ：
- 77,857
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Packaging :
- Tape and Reel (TR)
- Series :
- OptiMOS™
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Continuous Drain Current (ID) :
- 160A
- Number of Elements :
- 1
- Case Connection :
- DRAIN
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Power Dissipation :
- 214W
- Turn-Off Delay Time :
- 46 ns
- Published :
- 2007
- Mount :
- Surface Mount
- Operating Mode :
- ENHANCEMENT MODE
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- RoHS Status :
- ROHS3 Compliant
- ECCN Code :
- EAR99
- Vgs (Max) :
- ±20V
- Max Dual Supply Voltage :
- 40V
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Fall Time (Typ) :
- 17 ns
- Vgs(th) (Max) @ Id :
- 4V @ 150μA
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Gate to Source Voltage (Vgs) :
- 20V
- Number of Terminations :
- 6
- Operating Temperature :
- -55°C~175°C TJ
- Pulsed Drain Current-Max (IDM) :
- 640A
- FET Type :
- N-Channel
- Rise Time :
- 16ns
- Lead Free :
- Contains Lead
- Power Dissipation-Max :
- 214W Tc
- Current - Continuous Drain (Id) @ 25°C :
- 160A Tc
- Rds On (Max) @ Id, Vgs :
- 2.1m Ω @ 80A, 10V
- Turn On Delay Time :
- 30 ns
- JESD-609 Code :
- e3
- Terminal Position :
- Single
- Avalanche Energy Rating (Eas) :
- 898 mJ
- Additional Feature :
- ULTRA LOW RESISTANCE
- Terminal Form :
- Gull wing
- Terminal Finish :
- Tin (Sn)
- Transistor Element Material :
- SILICON
- Halogen Free :
- Halogen Free
- JESD-30 Code :
- R-PSSO-G6
- Gate Charge (Qg) (Max) @ Vgs :
- 145nC @ 10V
- Factory Lead Time :
- 12 Weeks
- Reach Compliance Code :
- not_compliant
- Mounting Type :
- Surface Mount
- Input Capacitance (Ciss) (Max) @ Vds :
- 9600pF @ 25V
- Datasheets
- IPB160N04S3H2ATMA1
N-Channel Tape & Reel (TR) 2.1m Ω @ 80A, 10V ±20V 9600pF @ 25V 145nC @ 10V TO-263-7, D2Pak (6 Leads + Tab)
IPB160N04S3H2ATMA1 Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 898 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 9600pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.As a result of its turn-off delay time, which is 46 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 640A, its maximum pulsed drain current.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 30 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The maximum dual supply voltage can be supported by 40V.In addition to reducing power consumption, this device uses drive voltage (10V).
IPB160N04S3H2ATMA1 Features
the avalanche energy rating (Eas) is 898 mJ
a continuous drain current (ID) of 160A
the turn-off delay time is 46 ns
based on its rated peak drain current 640A.
IPB160N04S3H2ATMA1 Applications
There are a lot of Infineon Technologies
IPB160N04S3H2ATMA1 applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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