IPB160N04S2L03ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

300W Tc

Terminal Position :

Single

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Input Capacitance (Ciss) (Max) @ Vds :

6000pF @ 15V

Series :

OptiMOS™

Drain-source On Resistance-Max :

0.0037Ohm

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Mounting Type :

Surface Mount

Number of Terminations :

6

Avalanche Energy Rating (Eas) :

810 mJ

Gate Charge (Qg) (Max) @ Vgs :

230nC @ 5V

FET Type :

N-Channel

Operating Temperature :

-55°C~175°C TJ

Packaging :

Tape and Reel (TR)

Operating Mode :

ENHANCEMENT MODE

JESD-30 Code :

R-PSSO-G6

Rds On (Max) @ Id, Vgs :

2.7m Ω @ 80A, 10V

Drain Current-Max (Abs) (ID) :

160A

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Reference Standard :

AEC-Q101

ECCN Code :

EAR99

Vgs(th) (Max) @ Id :

2V @ 250μA

Drain to Source Voltage (Vdss) :

40V

Terminal Form :

Gull wing

Configuration :

SINGLE WITH BUILT-IN DIODE

Surface Mount :

yes

RoHS Status :

ROHS3 Compliant

Current - Continuous Drain (Id) @ 25°C :

160A Tc

Transistor Element Material :

SILICON

Number of Elements :

1

Case Connection :

DRAIN

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2006

Pulsed Drain Current-Max (IDM) :

640A

Vgs (Max) :

±20V

Additional Feature :

ULTRA-LOW RESISTANCE

DS Breakdown Voltage-Min :

40V