IPB160N04S203ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

ECCN Code :

EAR99

DS Breakdown Voltage-Min :

40V

Vgs (Max) :

±20V

Input Capacitance (Ciss) (Max) @ Vds :

5300pF @ 25V

Pulsed Drain Current-Max (IDM) :

640A

Drive Voltage (Max Rds On,Min Rds On) :

10V

Operating Temperature :

-55°C~175°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Mounting Type :

Surface Mount

Power Dissipation-Max :

300W Tc

FET Type :

N-Channel

Drain to Source Voltage (Vdss) :

40V

Number of Terminations :

6

Operating Mode :

ENHANCEMENT MODE

Packaging :

Tape and Reel (TR)

Rds On (Max) @ Id, Vgs :

2.9m Ω @ 60A, 10V

Gate Charge (Qg) (Max) @ Vgs :

170nC @ 10V

Vgs(th) (Max) @ Id :

4V @ 250µA

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Form :

Gull wing

Additional Feature :

ULTRA-LOW RESISTANCE

Drain-source On Resistance-Max :

0.0029Ohm

Terminal Position :

Single

JESD-30 Code :

R-PSSO-G6

Reference Standard :

AEC-Q101

Number of Elements :

1

Case Connection :

DRAIN

Surface Mount :

yes

Series :

OptiMOS™

Published :

2006

Drain Current-Max (Abs) (ID) :

160A

Transistor Element Material :

SILICON

Avalanche Energy Rating (Eas) :

810 mJ

Current - Continuous Drain (Id) @ 25°C :

160A Tc