IPB156N22NFDATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Position :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

4V @ 270μA

JESD-609 Code :

e3

Mounting Type :

Surface Mount

Reach Compliance Code :

not_compliant

Number of Terminations :

2

Operating Temperature :

-55°C~175°C TJ

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Input Capacitance (Ciss) (Max) @ Vds :

6930pF @ 110V

JESD-30 Code :

R-PSSO-G2

FET Type :

N-Channel

Surface Mount :

yes

Terminal Form :

Gull wing

Vgs (Max) :

±20V

Number of Elements :

1

Case Connection :

DRAIN

DS Breakdown Voltage-Min :

220V

Series :

OptiMOS™FD

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Power Dissipation-Max :

300W Tc

Drive Voltage (Max Rds On,Min Rds On) :

10V

Avalanche Energy Rating (Eas) :

400 mJ

Terminal Finish :

Tin (Sn)

Published :

2013

Pulsed Drain Current-Max (IDM) :

288A

Drain to Source Voltage (Vdss) :

220V

Operating Mode :

ENHANCEMENT MODE

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Drain Current-Max (Abs) (ID) :

72A

RoHS Status :

ROHS3 Compliant

Factory Lead Time :

13 Weeks

Packaging :

Tape and Reel (TR)

Drain-source On Resistance-Max :

0.0156Ohm

ECCN Code :

EAR99

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

15.6m Ω @ 50A, 10V

Gate Charge (Qg) (Max) @ Vgs :

87nC @ 10V

Current - Continuous Drain (Id) @ 25°C :

72A Tc